Sub-band-gap laser micromachining of lithium niobate

F. K. Christensen; Matthias Müllenborn

doi:10.1063/1.113470

Sub-band-gap laser micromachining of lithium niobate

F. K. Christensen, Matthias Müllenborn

Meggitt A/S

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Abstract

Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency-doubled continuous-wave laser. A new method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric structures, or simple etching of grooves for precision positioning of optical fibers. ©1995 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	66
Issue number	21
Pages (from-to)	2772-2773
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.113470
Publication status	Published - 1995

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Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

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LINBO3

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10.1063/1.113470

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http://link.aip.org/link/?APPLAB/66/2772/1

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abstract = "Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency-doubled continuous-wave laser. A new method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric structures, or simple etching of grooves for precision positioning of optical fibers. {\textcopyright}1995 American Institute of Physics.",

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AU - Müllenborn, Matthias

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Y1 - 1995

N2 - Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency-doubled continuous-wave laser. A new method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric structures, or simple etching of grooves for precision positioning of optical fibers. ©1995 American Institute of Physics.

AB - Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency-doubled continuous-wave laser. A new method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric structures, or simple etching of grooves for precision positioning of optical fibers. ©1995 American Institute of Physics.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Sub-band-gap laser micromachining of lithium niobate

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