Sub-band-gap laser micromachining of lithium niobate

F. K. Christensen; Matthias Müllenborn

doi:10.1063/1.113470

Sub-band-gap laser micromachining of lithium niobate

F. K. Christensen, Matthias Müllenborn

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Abstract

Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency-doubled continuous-wave laser. A new method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric structures, or simple etching of grooves for precision positioning of optical fibers. ©1995 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	66
Issue number	21
Pages (from-to)	2772-2773
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.113470
Publication status	Published - 1995

Bibliographical note

Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Keywords

LINBO3

Access to Document

10.1063/1.113470

ChristensenFinal published version, 214 KB

http://link.aip.org/link/?APPLAB/66/2772/1

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title = "Sub-band-gap laser micromachining of lithium niobate",

abstract = "Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency-doubled continuous-wave laser. A new method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric structures, or simple etching of grooves for precision positioning of optical fibers. {\textcopyright}1995 American Institute of Physics.",

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AU - Müllenborn, Matthias

N1 - Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

PY - 1995

Y1 - 1995

N2 - Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency-doubled continuous-wave laser. A new method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric structures, or simple etching of grooves for precision positioning of optical fibers. ©1995 American Institute of Physics.

AB - Laser processing of insulators and semiconductors is usually realized using photon energies exceeding the band-gap energy. This makes laser processing of insulators difficult since high photon energies typically require either a pulsed laser or a frequency-doubled continuous-wave laser. A new method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric structures, or simple etching of grooves for precision positioning of optical fibers. ©1995 American Institute of Physics.

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