TY - JOUR
T1 - Study of Optoelectronic Features in Polar and Nonpolar Polymorphs of the Oxynitride Tin-Based Semiconductor InSnO2N
AU - Palummo, Maurizia
AU - Re Fiorentin, Michele
AU - Yamashita, Koichi
AU - Castelli, Ivano E.
AU - Giorgi, Giacomo
PY - 2023
Y1 - 2023
N2 - In view of its potential applicability in photoconversion processes, we here discuss the optoelectronic features of the recently proposed tin-based oxynitride material for (photo)catalysis, InSnO2N. In detail, by combining Density Functional and Many-Body Perturbation Theory, we compute the electronic and optical properties discussing how they vary from the nonpolar phase to the more stable polar one. After providing a detailed, unbiased, description of the optoelectronic features of the two phases, we have finally calculated the Spectroscopic Limited Maximum Efficiency and obtained data that further witness the relevance of InSnO2N for solar energy conversion processes.
AB - In view of its potential applicability in photoconversion processes, we here discuss the optoelectronic features of the recently proposed tin-based oxynitride material for (photo)catalysis, InSnO2N. In detail, by combining Density Functional and Many-Body Perturbation Theory, we compute the electronic and optical properties discussing how they vary from the nonpolar phase to the more stable polar one. After providing a detailed, unbiased, description of the optoelectronic features of the two phases, we have finally calculated the Spectroscopic Limited Maximum Efficiency and obtained data that further witness the relevance of InSnO2N for solar energy conversion processes.
U2 - 10.1021/acs.jpclett.3c00211
DO - 10.1021/acs.jpclett.3c00211
M3 - Letter
C2 - 36745501
SN - 1948-7185
VL - 14
SP - 1548
EP - 1555
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 6
ER -