Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2018Researchpeer-review

Standard

Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. / Ali, Abdul; Cipriani, Elisa; Johansen, Tom Keinicke; Colantonio, Paolo.

Proceedings of 2018 First International Workshop on Mobile Terahertz Systems . IEEE, 2018. p. 1-5.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2018Researchpeer-review

Harvard

Ali, A, Cipriani, E, Johansen, TK & Colantonio, P 2018, Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. in Proceedings of 2018 First International Workshop on Mobile Terahertz Systems . IEEE, pp. 1-5. https://doi.org/10.1109/IWMTS.2018.8454697

APA

Ali, A., Cipriani, E., Johansen, T. K., & Colantonio, P. (2018). Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. In Proceedings of 2018 First International Workshop on Mobile Terahertz Systems (pp. 1-5). IEEE. https://doi.org/10.1109/IWMTS.2018.8454697

CBE

Ali A, Cipriani E, Johansen TK, Colantonio P. 2018. Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. In Proceedings of 2018 First International Workshop on Mobile Terahertz Systems . IEEE. pp. 1-5. https://doi.org/10.1109/IWMTS.2018.8454697

MLA

Ali, Abdul et al. "Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier". Proceedings of 2018 First International Workshop on Mobile Terahertz Systems . IEEE. 2018, 1-5. https://doi.org/10.1109/IWMTS.2018.8454697

Vancouver

Ali A, Cipriani E, Johansen TK, Colantonio P. Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. In Proceedings of 2018 First International Workshop on Mobile Terahertz Systems . IEEE. 2018. p. 1-5 https://doi.org/10.1109/IWMTS.2018.8454697

Author

Ali, Abdul ; Cipriani, Elisa ; Johansen, Tom Keinicke ; Colantonio, Paolo. / Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. Proceedings of 2018 First International Workshop on Mobile Terahertz Systems . IEEE, 2018. pp. 1-5

Bibtex

@inproceedings{6afd042aacc245849acd83b7bc6139d8,
title = "Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier",
abstract = "At mm wave, and sub-THz frequencies the foundry usually does not provide information about the power amplifying capability or optimum impedances of the transistors for maximum power, and efficiency. Therefore, in this paper, we studied and analyzed the size of a SiGe HBT (Heterojunction Bipolar Transistor) in terms of output power and efficiency performance for the design of a power amplifier (PA) operating at 160 GHz. Load pull simulations were performed for various size of transistors. Optimum size transistors resulting in high power and efficiency are used to design a 160 GHz power amplifier using the foundry models for transmission lines and MIM capacitors. The simulated power amplifier (excluding interconnects for transistors and MIM) achieves a simulated output power of 18 dBm with a power added efficiency (PAE) of 19{\%}. Future work includes the design of low loss interconnects for transistors and MIM capacitors, and fabrication of the power amplifier.",
keywords = "Power generation, Silicon germanium, Gain, Heterojunction bipolar transistors, Power amplifiers, Power transmission lines",
author = "Abdul Ali and Elisa Cipriani and Johansen, {Tom Keinicke} and Paolo Colantonio",
year = "2018",
doi = "10.1109/IWMTS.2018.8454697",
language = "English",
isbn = "9781538612217",
pages = "1--5",
booktitle = "Proceedings of 2018 First International Workshop on Mobile Terahertz Systems",
publisher = "IEEE",

}

RIS

TY - GEN

T1 - Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier

AU - Ali, Abdul

AU - Cipriani, Elisa

AU - Johansen, Tom Keinicke

AU - Colantonio, Paolo

PY - 2018

Y1 - 2018

N2 - At mm wave, and sub-THz frequencies the foundry usually does not provide information about the power amplifying capability or optimum impedances of the transistors for maximum power, and efficiency. Therefore, in this paper, we studied and analyzed the size of a SiGe HBT (Heterojunction Bipolar Transistor) in terms of output power and efficiency performance for the design of a power amplifier (PA) operating at 160 GHz. Load pull simulations were performed for various size of transistors. Optimum size transistors resulting in high power and efficiency are used to design a 160 GHz power amplifier using the foundry models for transmission lines and MIM capacitors. The simulated power amplifier (excluding interconnects for transistors and MIM) achieves a simulated output power of 18 dBm with a power added efficiency (PAE) of 19%. Future work includes the design of low loss interconnects for transistors and MIM capacitors, and fabrication of the power amplifier.

AB - At mm wave, and sub-THz frequencies the foundry usually does not provide information about the power amplifying capability or optimum impedances of the transistors for maximum power, and efficiency. Therefore, in this paper, we studied and analyzed the size of a SiGe HBT (Heterojunction Bipolar Transistor) in terms of output power and efficiency performance for the design of a power amplifier (PA) operating at 160 GHz. Load pull simulations were performed for various size of transistors. Optimum size transistors resulting in high power and efficiency are used to design a 160 GHz power amplifier using the foundry models for transmission lines and MIM capacitors. The simulated power amplifier (excluding interconnects for transistors and MIM) achieves a simulated output power of 18 dBm with a power added efficiency (PAE) of 19%. Future work includes the design of low loss interconnects for transistors and MIM capacitors, and fabrication of the power amplifier.

KW - Power generation

KW - Silicon germanium

KW - Gain

KW - Heterojunction bipolar transistors

KW - Power amplifiers

KW - Power transmission lines

U2 - 10.1109/IWMTS.2018.8454697

DO - 10.1109/IWMTS.2018.8454697

M3 - Article in proceedings

SN - 9781538612217

SP - 1

EP - 5

BT - Proceedings of 2018 First International Workshop on Mobile Terahertz Systems

PB - IEEE

ER -