Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2018Researchpeer-review

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At mm wave, and sub-THz frequencies the foundry usually does not provide information about the power amplifying capability or optimum impedances of the transistors for maximum power, and efficiency. Therefore, in this paper, we studied and analyzed the size of a SiGe HBT (Heterojunction Bipolar Transistor) in terms of output power and efficiency performance for the design of a power amplifier (PA) operating at 160 GHz. Load pull simulations were performed for various size of transistors. Optimum size transistors resulting in high power and efficiency are used to design a 160 GHz power amplifier using the foundry models for transmission lines and MIM capacitors. The simulated power amplifier (excluding interconnects for transistors and MIM) achieves a simulated output power of 18 dBm with a power added efficiency (PAE) of 19%. Future work includes the design of low loss interconnects for transistors and MIM capacitors, and fabrication of the power amplifier.
Original languageEnglish
Title of host publicationProceedings of 2018 First International Workshop on Mobile Terahertz Systems
Number of pages5
PublisherIEEE
Publication date2018
Pages1-5
ISBN (Print)9781538612217
DOIs
Publication statusPublished - 2018
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Power generation, Silicon germanium, Gain, Heterojunction bipolar transistors, Power amplifiers, Power transmission lines

ID: 154666944