Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier

Abdul Ali, Elisa Cipriani, Tom Keinicke Johansen, Paolo Colantonio

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

At mm wave, and sub-THz frequencies the foundry usually does not provide information about the power amplifying capability or optimum impedances of the transistors for maximum power, and efficiency. Therefore, in this paper, we studied and analyzed the size of a SiGe HBT (Heterojunction Bipolar Transistor) in terms of output power and efficiency performance for the design of a power amplifier (PA) operating at 160 GHz. Load pull simulations were performed for various size of transistors. Optimum size transistors resulting in high power and efficiency are used to design a 160 GHz power amplifier using the foundry models for transmission lines and MIM capacitors. The simulated power amplifier (excluding interconnects for transistors and MIM) achieves a simulated output power of 18 dBm with a power added efficiency (PAE) of 19%. Future work includes the design of low loss interconnects for transistors and MIM capacitors, and fabrication of the power amplifier.
Original languageEnglish
Title of host publicationProceedings of 2018 First International Workshop on Mobile Terahertz Systems
Number of pages5
PublisherIEEE
Publication date2018
Pages1-5
ISBN (Print)9781538612217
DOIs
Publication statusPublished - 2018

Keywords

  • Power generation
  • Silicon germanium
  • Gain
  • Heterojunction bipolar transistors
  • Power amplifiers
  • Power transmission lines

Cite this

Ali, A., Cipriani, E., Johansen, T. K., & Colantonio, P. (2018). Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. In Proceedings of 2018 First International Workshop on Mobile Terahertz Systems (pp. 1-5). IEEE. https://doi.org/10.1109/IWMTS.2018.8454697
Ali, Abdul ; Cipriani, Elisa ; Johansen, Tom Keinicke ; Colantonio, Paolo. / Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. Proceedings of 2018 First International Workshop on Mobile Terahertz Systems . IEEE, 2018. pp. 1-5
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abstract = "At mm wave, and sub-THz frequencies the foundry usually does not provide information about the power amplifying capability or optimum impedances of the transistors for maximum power, and efficiency. Therefore, in this paper, we studied and analyzed the size of a SiGe HBT (Heterojunction Bipolar Transistor) in terms of output power and efficiency performance for the design of a power amplifier (PA) operating at 160 GHz. Load pull simulations were performed for various size of transistors. Optimum size transistors resulting in high power and efficiency are used to design a 160 GHz power amplifier using the foundry models for transmission lines and MIM capacitors. The simulated power amplifier (excluding interconnects for transistors and MIM) achieves a simulated output power of 18 dBm with a power added efficiency (PAE) of 19{\%}. Future work includes the design of low loss interconnects for transistors and MIM capacitors, and fabrication of the power amplifier.",
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Ali, A, Cipriani, E, Johansen, TK & Colantonio, P 2018, Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. in Proceedings of 2018 First International Workshop on Mobile Terahertz Systems . IEEE, pp. 1-5. https://doi.org/10.1109/IWMTS.2018.8454697

Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. / Ali, Abdul; Cipriani, Elisa; Johansen, Tom Keinicke; Colantonio, Paolo.

Proceedings of 2018 First International Workshop on Mobile Terahertz Systems . IEEE, 2018. p. 1-5.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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AB - At mm wave, and sub-THz frequencies the foundry usually does not provide information about the power amplifying capability or optimum impedances of the transistors for maximum power, and efficiency. Therefore, in this paper, we studied and analyzed the size of a SiGe HBT (Heterojunction Bipolar Transistor) in terms of output power and efficiency performance for the design of a power amplifier (PA) operating at 160 GHz. Load pull simulations were performed for various size of transistors. Optimum size transistors resulting in high power and efficiency are used to design a 160 GHz power amplifier using the foundry models for transmission lines and MIM capacitors. The simulated power amplifier (excluding interconnects for transistors and MIM) achieves a simulated output power of 18 dBm with a power added efficiency (PAE) of 19%. Future work includes the design of low loss interconnects for transistors and MIM capacitors, and fabrication of the power amplifier.

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Ali A, Cipriani E, Johansen TK, Colantonio P. Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier. In Proceedings of 2018 First International Workshop on Mobile Terahertz Systems . IEEE. 2018. p. 1-5 https://doi.org/10.1109/IWMTS.2018.8454697