Structure determination of the indium induced Si(001)-(4X3) reconstruction by surface x-ray diffraction and scanning tunneling microscopy

O. Bunk, G. Falkenberg, L. Seehofer, J.H. Zeysing, R.L. Johnson, M. Nielsen, R. Feidenhans'l, E. Landemark

    Research output: Contribution to journalJournal articleResearch

    Abstract

    The indium-induced Si(001)-(4 X 3) reconstruction has been investigated by surface X-ray diffraction (SXRD) measurements with synchrotron radiation and scanning tunneling microscopy (STM). The Patterson function analysis enables us to exclude In dimers as a structural element in this reconstruction. We present a new structural model which includes 6 In atoms threefold coordinated to Si atoms and 5 displaced Si atoms per unit cell. Relaxations down to the sixth layer were determined. 'Trimers' made up of In-Si-In atoms are a key structural element. (C) 1998 Elsevier Science B.V.
    Original languageEnglish
    JournalApplied Surface Science
    Volume123/124
    Pages (from-to)104-110
    ISSN0169-4332
    DOIs
    Publication statusPublished - 1998

    Fingerprint Dive into the research topics of 'Structure determination of the indium induced Si(001)-(4X3) reconstruction by surface x-ray diffraction and scanning tunneling microscopy'. Together they form a unique fingerprint.

    Cite this