Structure determination of the indium induced Si(001)-(4X3) reconstruction by surface x-ray diffraction and scanning tunneling microscopy

O. Bunk; G. Falkenberg; L. Seehofer; J.H. Zeysing; R.L. Johnson; M. Nielsen; R. Feidenhans'l; E. Landemark

doi:10.1016/S0169-4332(97)00472-8

Structure determination of the indium induced Si(001)-(4X3) reconstruction by surface x-ray diffraction and scanning tunneling microscopy

O. Bunk, G. Falkenberg, L. Seehofer, J.H. Zeysing, R.L. Johnson, M. Nielsen, R. Feidenhans'l, E. Landemark

Research output: Contribution to journal › Journal article › Research

Abstract

The indium-induced Si(001)-(4 X 3) reconstruction has been investigated by surface X-ray diffraction (SXRD) measurements with synchrotron radiation and scanning tunneling microscopy (STM). The Patterson function analysis enables us to exclude In dimers as a structural element in this reconstruction. We present a new structural model which includes 6 In atoms threefold coordinated to Si atoms and 5 displaced Si atoms per unit cell. Relaxations down to the sixth layer were determined. 'Trimers' made up of In-Si-In atoms are a key structural element. (C) 1998 Elsevier Science B.V.

Original language	English
Journal	Applied Surface Science
Volume	123/124
Pages (from-to)	104-110
ISSN	0169-4332
DOIs	https://doi.org/10.1016/S0169-4332(97)00472-8
Publication status	Published - 1998

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title = "Structure determination of the indium induced Si(001)-(4X3) reconstruction by surface x-ray diffraction and scanning tunneling microscopy",

abstract = "The indium-induced Si(001)-(4 X 3) reconstruction has been investigated by surface X-ray diffraction (SXRD) measurements with synchrotron radiation and scanning tunneling microscopy (STM). The Patterson function analysis enables us to exclude In dimers as a structural element in this reconstruction. We present a new structural model which includes 6 In atoms threefold coordinated to Si atoms and 5 displaced Si atoms per unit cell. Relaxations down to the sixth layer were determined. 'Trimers' made up of In-Si-In atoms are a key structural element. (C) 1998 Elsevier Science B.V. ",

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author = "O. Bunk and G. Falkenberg and L. Seehofer and J.H. Zeysing and R.L. Johnson and M. Nielsen and R. Feidenhans'l and E. Landemark",

year = "1998",

doi = "10.1016/S0169-4332(97)00472-8",

language = "English",

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journal = "Applied Surface Science",

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T1 - Structure determination of the indium induced Si(001)-(4X3) reconstruction by surface x-ray diffraction and scanning tunneling microscopy

AU - Bunk, O.

AU - Falkenberg, G.

AU - Seehofer, L.

AU - Zeysing, J.H.

AU - Johnson, R.L.

AU - Nielsen, M.

AU - Feidenhans'l, R.

AU - Landemark, E.

PY - 1998

Y1 - 1998

N2 - The indium-induced Si(001)-(4 X 3) reconstruction has been investigated by surface X-ray diffraction (SXRD) measurements with synchrotron radiation and scanning tunneling microscopy (STM). The Patterson function analysis enables us to exclude In dimers as a structural element in this reconstruction. We present a new structural model which includes 6 In atoms threefold coordinated to Si atoms and 5 displaced Si atoms per unit cell. Relaxations down to the sixth layer were determined. 'Trimers' made up of In-Si-In atoms are a key structural element. (C) 1998 Elsevier Science B.V.

AB - The indium-induced Si(001)-(4 X 3) reconstruction has been investigated by surface X-ray diffraction (SXRD) measurements with synchrotron radiation and scanning tunneling microscopy (STM). The Patterson function analysis enables us to exclude In dimers as a structural element in this reconstruction. We present a new structural model which includes 6 In atoms threefold coordinated to Si atoms and 5 displaced Si atoms per unit cell. Relaxations down to the sixth layer were determined. 'Trimers' made up of In-Si-In atoms are a key structural element. (C) 1998 Elsevier Science B.V.

KW - Nye funktionelle materialer

U2 - 10.1016/S0169-4332(97)00472-8

DO - 10.1016/S0169-4332(97)00472-8

M3 - Journal article

VL - 123/124

SP - 104

EP - 110

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

Structure determination of the indium induced Si(001)-(4X3) reconstruction by surface x-ray diffraction and scanning tunneling microscopy

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