Abstract
A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki-Taupin equations. Excellent agreement between the experimental curve and the simulation is achieved assuming that indium-rich VCSML QDs are embedded in a quantum well (QW) with lower indium content and an observed QD coverage of 10%. In the VCSML QDs, the vertical lattice mismatch of the InAs monolayer with respect to GaAs is around 1.4%, while the lattice mismatch in the QW is negligible. The photoluminescence is transverse magnetic-polarized in the edge geometry.
Original language | English |
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Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 22 |
Pages (from-to) | 3859-3861 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 2003 |
Bibliographical note
Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Keywords
- GAAS
- NANOSTRUCTURES
- INSERTIONS