Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

Zhangcheng Xu, Dan Birkedal, Jørn Märcher Hvam, Z.Y. Zhao, Y.M. Liu, K.T. Yang, A. Kanjilal, J. Sadowski

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Abstract

A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki-Taupin equations. Excellent agreement between the experimental curve and the simulation is achieved assuming that indium-rich VCSML QDs are embedded in a quantum well (QW) with lower indium content and an observed QD coverage of 10%. In the VCSML QDs, the vertical lattice mismatch of the InAs monolayer with respect to GaAs is around 1.4%, while the lattice mismatch in the QW is negligible. The photoluminescence is transverse magnetic-polarized in the edge geometry.
Original languageEnglish
JournalApplied Physics Letters
Volume82
Issue number22
Pages (from-to)3859-3861
ISSN0003-6951
DOIs
Publication statusPublished - 2003

Bibliographical note

Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

  • GAAS
  • NANOSTRUCTURES
  • INSERTIONS

Cite this

Xu, Z., Birkedal, D., Hvam, J. M., Zhao, Z. Y., Liu, Y. M., Yang, K. T., Kanjilal, A., & Sadowski, J. (2003). Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots. Applied Physics Letters, 82(22), 3859-3861. https://doi.org/10.1063/1.1581005