Structural investigation of GaInP nanowires using X-ray diffraction

D. Kriegner; Johan Mikael Persson; T. Etzelstorfer; D. Jacobsson; J. Wallentin; Jakob Birkedal Wagner; K. Deppert; M. T. Borgström; J. Stangl

doi:10.1016/j.tsf.2013.02.112

Structural investigation of GaInP nanowires using X-ray diffraction

D. Kriegner, Johan Mikael Persson, T. Etzelstorfer, D. Jacobsson, J. Wallentin, Jakob Birkedal Wagner, K. Deppert, M. T. Borgström, J. Stangl

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Abstract

In this work the structure of ternary GaxIn1−xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal–organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10μm are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements.

Original language	English
Journal	Thin Solid Films
Volume	543
Pages (from-to)	100-105
ISSN	0040-6090
DOIs	https://doi.org/10.1016/j.tsf.2013.02.112
Publication status	Published - 2013
Event	4th International Conference on NANO-structures SElf Assembly: NanoSEA 2012 - Sardinia, Italy Duration: 25 Jun 2012 → 29 Jun 2012 http://nanosea.roma2.infn.it/

Conference

Conference	4th International Conference on NANO-structures SElf Assembly
Country/Territory	Italy
City	Sardinia
Period	25/06/2012 → 29/06/2012
Internet address	http://nanosea.roma2.infn.it/

Keywords

Nanowires
X-ray diffraction
III–V semiconductors

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10.1016/j.tsf.2013.02.112

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title = "Structural investigation of GaInP nanowires using X-ray diffraction",

abstract = "In this work the structure of ternary GaxIn1−xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal–organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20\%. The use of modern synchrotron sources, where beam-sizes in the order of several 10μm are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements.",

keywords = "Nanowires, X-ray diffraction, III–V semiconductors",

author = "D. Kriegner and Persson, \{Johan Mikael\} and T. Etzelstorfer and D. Jacobsson and J. Wallentin and Wagner, \{Jakob Birkedal\} and K. Deppert and Borgstr{\"o}m, \{M. T.\} and J. Stangl",

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doi = "10.1016/j.tsf.2013.02.112",

language = "English",

volume = "543",

pages = "100--105",

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publisher = "Elsevier",

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T1 - Structural investigation of GaInP nanowires using X-ray diffraction

AU - Kriegner, D.

AU - Persson, Johan Mikael

AU - Etzelstorfer, T.

AU - Jacobsson, D.

AU - Wallentin, J.

AU - Wagner, Jakob Birkedal

AU - Deppert, K.

AU - Borgström, M. T.

AU - Stangl, J.

PY - 2013

Y1 - 2013

N2 - In this work the structure of ternary GaxIn1−xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal–organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10μm are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements.

AB - In this work the structure of ternary GaxIn1−xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal–organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10μm are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements.

KW - Nanowires

KW - X-ray diffraction

KW - III–V semiconductors

U2 - 10.1016/j.tsf.2013.02.112

DO - 10.1016/j.tsf.2013.02.112

M3 - Conference article

SN - 0040-6090

VL - 543

SP - 100

EP - 105

JO - Thin Solid Films

JF - Thin Solid Films

T2 - 4th International Conference on NANO-structures SElf Assembly

Y2 - 25 June 2012 through 29 June 2012

ER -

Structural investigation of GaInP nanowires using X-ray diffraction

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