Structural investigation of GaInP nanowires using X-ray diffraction

D. Kriegner, Johan Mikael Persson, T. Etzelstorfer, D. Jacobsson, J. Wallentin, Jakob Birkedal Wagner, K. Deppert, M. T. Borgström, J. Stangl

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    Abstract

    In this work the structure of ternary GaxIn1−xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal–organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10μm are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements.
    Original languageEnglish
    JournalThin Solid Films
    Volume543
    Pages (from-to)100-105
    ISSN0040-6090
    DOIs
    Publication statusPublished - 2013
    Event4th International Conference on NANO-structures SElf Assembly: NanoSEA 2012 - Sardinia, Italy
    Duration: 25 Jun 201229 Jun 2012
    http://nanosea.roma2.infn.it/

    Conference

    Conference4th International Conference on NANO-structures SElf Assembly
    CountryItaly
    CitySardinia
    Period25/06/201229/06/2012
    Internet address

    Keywords

    • Nanowires
    • X-ray diffraction
    • III–V semiconductors

    Cite this

    Kriegner, D., Persson, J. M., Etzelstorfer, T., Jacobsson, D., Wallentin, J., Wagner, J. B., Deppert, K., Borgström, M. T., & Stangl, J. (2013). Structural investigation of GaInP nanowires using X-ray diffraction. Thin Solid Films, 543, 100-105. https://doi.org/10.1016/j.tsf.2013.02.112