Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

Béla Pécz, Lajos Tóth, Árpád Barna, George Tsiakatouras, Adebowale Olufunso Ajagunna, András Kovács, Alexandros Georgakilas

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer.
    Original languageEnglish
    JournalDiamond and Related Materials
    Volume34
    Pages (from-to)9-12
    ISSN0925-9635
    DOIs
    Publication statusPublished - 2013

    Keywords

    • Crystalline materials
    • Epitaxial films
    • Epitaxial growth
    • Gallium nitride
    • Inversion layers
    • Molecular beam epitaxy
    • Transmission electron microscopy
    • Diamonds

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