Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Katarzyna Gas, Janusz Sadowski, Takeshi Kasama, Aloyzas Siusys, Wojciech Zaleszczyk, Tomasz Wojciechowski, Jean-François Morhange, Abdulmenaf Altintaş, H. Q. Xu, Wojciech Szuszkiewicz

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.
    Original languageEnglish
    JournalNanoscale
    Volume5
    Issue number16
    Pages (from-to)7410-7418
    ISSN2040-3364
    DOIs
    Publication statusPublished - 2013

    Keywords

    • Epitaxial growth
    • Gallium arsenide
    • Manganese
    • Molecular beam epitaxy
    • Photoluminescence
    • Semiconducting gallium
    • Transmission electron microscopy
    • Nanowires

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