Abstract
We report the magnetic properties, microstnicture and surface morphology of epitaxially grown Fe2CrSi films. highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400 degrees C. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe2CrSi and MgO to prevent the oxidation of Fe2CrSi.
Original language | English |
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Publication date | 2013 |
Number of pages | 4 |
Publication status | Published - 2013 |
Externally published | Yes |
Event | 2013 IEEE 5th International Nanoelectronics Conference - Resorts World Sentosa, Singapore Duration: 2 Jan 2013 → 4 Jan 2013 https://ieeexplore.ieee.org/xpl/conhome/6457517/proceeding |
Conference
Conference | 2013 IEEE 5th International Nanoelectronics Conference |
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Location | Resorts World Sentosa |
Country/Territory | Singapore |
Period | 02/01/2013 → 04/01/2013 |
Internet address |
Keywords
- ENGINEERING,
- NANOSCIENCE
- CHEMICAL DISORDER
- VB ELEMENT
- Heusler alloy
- half metal
- MTJ
- TMR
- Fe2CrSi