Structural and Magnetic Properties of Fe2CrSi Heusler Alloy and Tunneling Magneto Resistance of its Magnetic Tunneling Junctions

Yu-Pu Wang, Jin-Jun Qiu, Hui Lu, Qi-Jia Yap, Wen-Hong Wang, Gu-Chang Han, Duc-The Ngo, Kie-Leong Teo

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Abstract

We report the magnetic properties, microstnicture and surface morphology of epitaxially grown Fe2CrSi films. highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400 degrees C. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe2CrSi and MgO to prevent the oxidation of Fe2CrSi.
Original languageEnglish
Publication date2013
Number of pages4
Publication statusPublished - 2013
Externally publishedYes
EventIEEE 5th International Nanoelectronics Conference - , Singapore
Duration: 2 Jan 20134 Jan 2013

Conference

ConferenceIEEE 5th International Nanoelectronics Conference
CountrySingapore
Period02/01/201304/01/2013

Keywords

  • ENGINEERING,
  • NANOSCIENCE
  • CHEMICAL DISORDER
  • VB ELEMENT
  • Heusler alloy
  • half metal
  • MTJ
  • TMR
  • Fe2CrSi

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