Structural and Magnetic Properties of Fe2CrSi Heusler Alloy and Tunneling Magneto Resistance of its Magnetic Tunneling Junctions

Yu-Pu Wang; Jin-Jun Qiu; Hui Lu; Qi-Jia Yap; Wen-Hong Wang; Gu-Chang Han; Duc-The Ngo; Kie-Leong Teo

Structural and Magnetic Properties of Fe2CrSi Heusler Alloy and Tunneling Magneto Resistance of its Magnetic Tunneling Junctions

Yu-Pu Wang, Jin-Jun Qiu, Hui Lu, Qi-Jia Yap, Wen-Hong Wang, Gu-Chang Han, Duc-The Ngo, Kie-Leong Teo

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Abstract

We report the magnetic properties, microstnicture and surface morphology of epitaxially grown Fe2CrSi films. highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400 degrees C. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe2CrSi and MgO to prevent the oxidation of Fe2CrSi.

Original language	English
Publication date	2013
Number of pages	4
Publication status	Published - 2013
Externally published	Yes
Event	2013 IEEE 5th International Nanoelectronics Conference - Resorts World Sentosa, Singapore Duration: 2 Jan 2013 → 4 Jan 2013 https://ieeexplore.ieee.org/xpl/conhome/6457517/proceeding

Conference

Conference	2013 IEEE 5th International Nanoelectronics Conference
Location	Resorts World Sentosa
Country/Territory	Singapore
Period	02/01/2013 → 04/01/2013
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6457517/proceeding

Keywords

ENGINEERING,
NANOSCIENCE
CHEMICAL DISORDER
VB ELEMENT
Heusler alloy
half metal
MTJ
TMR
Fe2CrSi

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@conference{87f88556d14e4ad7ac689a612f46207a,

title = "Structural and Magnetic Properties of Fe2CrSi Heusler Alloy and Tunneling Magneto Resistance of its Magnetic Tunneling Junctions",

abstract = "We report the magnetic properties, microstnicture and surface morphology of epitaxially grown Fe2CrSi films. highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400 degrees C. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe2CrSi and MgO to prevent the oxidation of Fe2CrSi.",

keywords = "ENGINEERING,, NANOSCIENCE, CHEMICAL DISORDER, VB ELEMENT, Heusler alloy, half metal, MTJ, TMR, Fe2CrSi",

author = "Yu-Pu Wang and Jin-Jun Qiu and Hui Lu and Qi-Jia Yap and Wen-Hong Wang and Gu-Chang Han and Duc-The Ngo and Kie-Leong Teo",

year = "2013",

language = "English",

note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",

url = "https://ieeexplore.ieee.org/xpl/conhome/6457517/proceeding",

}

TY - CONF

T1 - Structural and Magnetic Properties of Fe2CrSi Heusler Alloy and Tunneling Magneto Resistance of its Magnetic Tunneling Junctions

AU - Wang, Yu-Pu

AU - Qiu, Jin-Jun

AU - Lu, Hui

AU - Yap, Qi-Jia

AU - Wang, Wen-Hong

AU - Han, Gu-Chang

AU - Ngo, Duc-The

AU - Teo, Kie-Leong

PY - 2013

Y1 - 2013

N2 - We report the magnetic properties, microstnicture and surface morphology of epitaxially grown Fe2CrSi films. highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400 degrees C. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe2CrSi and MgO to prevent the oxidation of Fe2CrSi.

AB - We report the magnetic properties, microstnicture and surface morphology of epitaxially grown Fe2CrSi films. highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400 degrees C. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe2CrSi and MgO to prevent the oxidation of Fe2CrSi.

KW - ENGINEERING,

KW - NANOSCIENCE

KW - CHEMICAL DISORDER

KW - VB ELEMENT

KW - Heusler alloy

KW - half metal

KW - MTJ

KW - TMR

KW - Fe2CrSi

M3 - Paper

T2 - 2013 IEEE 5th International Nanoelectronics Conference

Y2 - 2 January 2013 through 4 January 2013

ER -

Structural and Magnetic Properties of Fe2CrSi Heusler Alloy and Tunneling Magneto Resistance of its Magnetic Tunneling Junctions

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