The formation of electric field domains in doped semiconductor superlattices is described within a microscopic model. Due to the presence of impurity bands in low-doped samples the current-voltage characteristic is essentially different compared to medium-doped samples. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 1998|