Strain tuning of optical properties in Bi2Se3

Mathias Rosdahl Jensen; Jesper Mørk; Morten Willatzen

doi:10.1109/NUSOD.2017.8010003

Strain tuning of optical properties in Bi₂Se₃

Mathias Rosdahl Jensen^*, Jesper Mørk, Morten Willatzen

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Based on symmetry principles we determine the most general Hamiltonian for the low energy physics of Bi₂Se₃, including contributions due to a static electric field and strain. The full three-dimensional model is projected into the surface states at k= 0, giving an effective two-dimensional Hamiltonian for the surface states. Contributions from the strain tensor breaks the anisotropy of the surface state spectrum, giving an elleptical Dirac cone. Within this model we calculate the absorption spectrum for an ultra-thin film. We show that the fundamental absorption edge can be effectively tuned by application of uniaxial strain.

Original language	English
Title of host publication	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Number of pages	2
Publisher	IEEE Computer Society Press
Publication date	11 Aug 2017
Pages	85-86
Article number	8010003
ISBN (Electronic)	9781509053230
DOIs	https://doi.org/10.1109/NUSOD.2017.8010003
Publication status	Published - 11 Aug 2017
Event	17th International Conference on Numerical Simulation of Optoelectronic Devices - Technical University of Denmark, Lyngby, Denmark Duration: 24 Jul 2017 → 28 Jul 2017 Conference number: 17

Conference

Conference	17th International Conference on Numerical Simulation of Optoelectronic Devices
Number	17
Location	Technical University of Denmark
Country/Territory	Denmark
City	Lyngby
Period	24/07/2017 → 28/07/2017

Access to Document

10.1109/NUSOD.2017.8010003

OpenUrl availability

Full text

Cite this

@inproceedings{7ae80eaa103645c187bbc35351f33cda,

title = "Strain tuning of optical properties in Bi2Se3",

abstract = "Based on symmetry principles we determine the most general Hamiltonian for the low energy physics of Bi2Se3, including contributions due to a static electric field and strain. The full three-dimensional model is projected into the surface states at k= 0, giving an effective two-dimensional Hamiltonian for the surface states. Contributions from the strain tensor breaks the anisotropy of the surface state spectrum, giving an elleptical Dirac cone. Within this model we calculate the absorption spectrum for an ultra-thin film. We show that the fundamental absorption edge can be effectively tuned by application of uniaxial strain.",

author = "Jensen, {Mathias Rosdahl} and Jesper M{\o}rk and Morten Willatzen",

year = "2017",

month = aug,

day = "11",

doi = "10.1109/NUSOD.2017.8010003",

language = "English",

pages = "85--86",

booktitle = "17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017",

publisher = "IEEE Computer Society Press",

note = "17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 ; Conference date: 24-07-2017 Through 28-07-2017",

}

Jensen, MR, Mørk, J & Willatzen, M 2017, Strain tuning of optical properties in Bi₂Se₃. in 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017., 8010003, IEEE Computer Society Press, pp. 85-86, 17th International Conference on Numerical Simulation of Optoelectronic Devices, Lyngby, Denmark, 24/07/2017. https://doi.org/10.1109/NUSOD.2017.8010003

Strain tuning of optical properties in Bi₂Se₃. / Jensen, Mathias Rosdahl; Mørk, Jesper; Willatzen, Morten.
17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017. IEEE Computer Society Press, 2017. p. 85-86 8010003.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Strain tuning of optical properties in Bi2Se3

AU - Jensen, Mathias Rosdahl

AU - Mørk, Jesper

AU - Willatzen, Morten

N1 - Conference code: 17

PY - 2017/8/11

Y1 - 2017/8/11

N2 - Based on symmetry principles we determine the most general Hamiltonian for the low energy physics of Bi2Se3, including contributions due to a static electric field and strain. The full three-dimensional model is projected into the surface states at k= 0, giving an effective two-dimensional Hamiltonian for the surface states. Contributions from the strain tensor breaks the anisotropy of the surface state spectrum, giving an elleptical Dirac cone. Within this model we calculate the absorption spectrum for an ultra-thin film. We show that the fundamental absorption edge can be effectively tuned by application of uniaxial strain.

AB - Based on symmetry principles we determine the most general Hamiltonian for the low energy physics of Bi2Se3, including contributions due to a static electric field and strain. The full three-dimensional model is projected into the surface states at k= 0, giving an effective two-dimensional Hamiltonian for the surface states. Contributions from the strain tensor breaks the anisotropy of the surface state spectrum, giving an elleptical Dirac cone. Within this model we calculate the absorption spectrum for an ultra-thin film. We show that the fundamental absorption edge can be effectively tuned by application of uniaxial strain.

U2 - 10.1109/NUSOD.2017.8010003

DO - 10.1109/NUSOD.2017.8010003

M3 - Article in proceedings

AN - SCOPUS:85028594554

SP - 85

EP - 86

BT - 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017

PB - IEEE Computer Society Press

T2 - 17th International Conference on Numerical Simulation of Optoelectronic Devices

Y2 - 24 July 2017 through 28 July 2017

ER -