Strain tuning of optical properties in Bi2Se3

Mathias Rosdahl Jensen*, Jesper Mørk, Morten Willatzen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Based on symmetry principles we determine the most general Hamiltonian for the low energy physics of Bi2Se3, including contributions due to a static electric field and strain. The full three-dimensional model is projected into the surface states at k= 0, giving an effective two-dimensional Hamiltonian for the surface states. Contributions from the strain tensor breaks the anisotropy of the surface state spectrum, giving an elleptical Dirac cone. Within this model we calculate the absorption spectrum for an ultra-thin film. We show that the fundamental absorption edge can be effectively tuned by application of uniaxial strain.

Original languageEnglish
Title of host publication17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Number of pages2
PublisherIEEE Computer Society Press
Publication date11 Aug 2017
Pages85-86
Article number8010003
ISBN (Electronic)9781509053230
DOIs
Publication statusPublished - 11 Aug 2017
Event17th International Conference on Numerical Simulation of Optoelectronic Devices - Technical University of Denmark, Lyngby, Denmark
Duration: 24 Jul 201728 Jul 2017
Conference number: 17

Conference

Conference17th International Conference on Numerical Simulation of Optoelectronic Devices
Number17
LocationTechnical University of Denmark
CountryDenmark
CityLyngby
Period24/07/201728/07/2017

Fingerprint Dive into the research topics of 'Strain tuning of optical properties in Bi<sub>2</sub>Se<sub>3</sub>'. Together they form a unique fingerprint.

Cite this