Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Magnus W. Larsson, Jakob B. Wagner, Mathias Wallin, Paul Hakansson, Linus E. Froberg, Lars Samuelson, L. Reine Wallenberg

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
Original languageEnglish
Article number015504
JournalNanotechnology
Volume18
Issue number1
Number of pages8
ISSN0957-4484
DOIs
Publication statusPublished - 2007
Externally publishedYes

Keywords

  • NANOSCIENCE
  • MATERIALS
  • PHYSICS,
  • TRANSMISSION ELECTRON-MICROSCOPY
  • QUANTUM-WIRES
  • GROWTH
  • TRANSITION
  • ANISOTROPY
  • MECHANISM
  • IMAGES
  • HREM
  • GAAS

Cite this

Larsson, M. W., Wagner, J. B., Wallin, M., Hakansson, P., Froberg, L. E., Samuelson, L., & Wallenberg, L. R. (2007). Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires. Nanotechnology, 18(1), [015504]. https://doi.org/10.1088/0957-4484/18/1/015504