Abstract
The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
Original language | English |
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Article number | 015504 |
Journal | Nanotechnology |
Volume | 18 |
Issue number | 1 |
Number of pages | 8 |
ISSN | 0957-4484 |
DOIs | |
Publication status | Published - 2007 |
Externally published | Yes |
Keywords
- NANOSCIENCE
- MATERIALS
- PHYSICS,
- TRANSMISSION ELECTRON-MICROSCOPY
- QUANTUM-WIRES
- GROWTH
- TRANSITION
- ANISOTROPY
- MECHANISM
- IMAGES
- HREM
- GAAS