Strain in nanoscale Germanium hut clusters on Si(001) studied by x-ray diffraction

A.J. Steinfort, P.M.L.O. Scholte, A. Ettema, F. Tuinstra, M. Nielsen, E. Landemark, D.-M. Smilgies, R. Feidenhans'l, G. Falkenberg, L. Seehofer, R.L. Johnson

    Research output: Contribution to journalJournal articleResearch

    Abstract

    Scanning tunneling microscopy and synchrotron x-ray diffraction have been used to investigate nanoscale Ge hut clusters on Si(001). We have been able to identify the contributions to the scattered x-ray intensity which arise solely from the hut clusters and have shown that x-ray diffraction can be very sensitive to the strain field in the hut clusters. At the Ge/Si interface the Ge clusters are almost fully strained with a misfit of only 0.5% but towards the apex of the clusters the strain is relaxed and the atomic spacing is close to the natural Ge lattice spacing with a 4.2% misfit.
    Original languageEnglish
    JournalPhysical Review Letters
    Volume77
    Issue number10
    Pages (from-to)2009-2012
    ISSN0031-9007
    DOIs
    Publication statusPublished - 1996

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