Strain in inhomogeneous InAs/GaAs quantum dot structures

B. Lassen, D. Barettin, Morten Willatzen

Research output: Contribution to journalConference articleResearchpeer-review


Most Non-destructive experimental approaches for the determination of indium concentration profiles give information about average indium concentration profiles only. Due to this, there is a need to extrapolate the indium concentration profiles in a way that takes into account the geometry of the quantum dots. We here present two extrapolation approaches. In the first approach we assume that the indium concentration profile is constant in the direction perpendicular to the measurement plane, while in the second approach we take into account the symmetry of the structure. Both approaches are compared to a profile with a constant indium concentration inside the dot.
Original languageEnglish
Article number012007
Book seriesJournal of Physics: Conference Series (Online)
Issue number1
Number of pages5
Publication statusPublished - 2012
Externally publishedYes
Event3rd Workshop on Theory, Modelling and Computational Methods for Semiconductors (TMCSIII) - Leeds, United Kingdom
Duration: 18 Jan 201220 Jan 2012


Workshop3rd Workshop on Theory, Modelling and Computational Methods for Semiconductors (TMCSIII)
CountryUnited Kingdom
Internet address

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