Strain Engineering of Kapitza Resistance in Few-Layer Graphene

Jie Chen, Jens Honore Walther, Petros Koumoutsakos

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We demonstrate through molecular dynamics simulations that the Kapitza resistance in few-layer graphene (FLG) can be controlled by applying mechanical strain. For unstrained FLG, the Kapitza resistance decreases with the increase of thickness and reaches an asymptotic value of 6 × 10–10 m2K/W at a thickness about 16 nm. Uniaxial cross-plane strain is found to increase the Kapitza resistance in FLG monotonically, when the applied strain varies from compressive to tensile. Moreover, uniaxial strain couples the in-plane and out-of-plane strain/stress when the surface of FLG is buckled. We find that with a compressive cross-plane stress of 2 GPa, the Kapitza resistance is reduced by about 50%. On the other hand it is almost tripled with a tensile cross-plane stress of 1 GPa. Remarkably, compressive in-plane strain can either increase or reduce the Kapitza resistance, depending on the specific way it is applied. Our study suggests that graphene can be exploited for both heat dissipation and insulation through strain engineering.
Original languageEnglish
JournalNano Letters
Volume14
Issue number2
Pages (from-to)819–825
ISSN1530-6984
DOIs
Publication statusPublished - 2014

Keywords

  • Strain effect
  • Kapitza resistance
  • Few-layer graphene
  • Molecular dynamics simulations
  • Vibrational density of states

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