Stokes and anti-Stokes photoluminescence towards five different In-x(Al0.17Ga0.83)(1-x)As/Al0.17Ga0.83As quantum wells

S. Machida; T. Tadakuma; A. Satake; K. Fujiwara; J. R. Folkenberg; Jørn Märcher Hvam

doi:10.1063/1.2121928

Stokes and anti-Stokes photoluminescence towards five different In-x(Al0.17Ga0.83)(1-x)As/Al0.17Ga0.83As quantum wells

S. Machida, T. Tadakuma, A. Satake, K. Fujiwara, J. R. Folkenberg, Jørn Märcher Hvam

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Abstract

Stokes and anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga0.83)1–xAs/Al0.17Ga0.83As quantum-well (QW) heterostructure consisting of five QWs with different x values. Stokes PL spectra of this sample show a significant difference in PL intensity between the wells under indirect excitation conditions due to the existence of competitive resonant and nonresonant capture processes, while they exhibit a rather uniform PL intensity distribution under direct excitation. When the excitation wavelength is tuned to 810 nm for AS-PL detection, it is transparent to the five QWs and thus the photoabsorption can only occur in the GaAs (rear buffer and front cap) layers. It is found that the AS-PL spectra show a similar intensity distribution to the one observed under the indirect excitation. This result means that the AS-PL intensity distribution of the QWs is basically determined by the competitive capture of photoexcited carriers through the thick barriers, generated far from the five wells due to the nonlinear excitation processes in GaAs. ©2005 American Institute of Physics

Original language	English
Journal	Journal of Applied Physics
Volume	98
Issue number	8
Pages (from-to)	083527
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.2121928
Publication status	Published - 2005

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Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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title = "Stokes and anti-Stokes photoluminescence towards five different In-x(Al0.17Ga0.83)(1-x)As/Al0.17Ga0.83As quantum wells",

abstract = "Stokes and anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga0.83)1–xAs/Al0.17Ga0.83As quantum-well (QW) heterostructure consisting of five QWs with different x values. Stokes PL spectra of this sample show a significant difference in PL intensity between the wells under indirect excitation conditions due to the existence of competitive resonant and nonresonant capture processes, while they exhibit a rather uniform PL intensity distribution under direct excitation. When the excitation wavelength is tuned to 810 nm for AS-PL detection, it is transparent to the five QWs and thus the photoabsorption can only occur in the GaAs (rear buffer and front cap) layers. It is found that the AS-PL spectra show a similar intensity distribution to the one observed under the indirect excitation. This result means that the AS-PL intensity distribution of the QWs is basically determined by the competitive capture of photoexcited carriers through the thick barriers, generated far from the five wells due to the nonlinear excitation processes in GaAs. {\textcopyright}2005 American Institute of Physics",

author = "S. Machida and T. Tadakuma and A. Satake and K. Fujiwara and Folkenberg, {J. R.} and Hvam, {J{\o}rn M{\"a}rcher}",

note = "Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

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T1 - Stokes and anti-Stokes photoluminescence towards five different In-x(Al0.17Ga0.83)(1-x)As/Al0.17Ga0.83As quantum wells

AU - Machida, S.

AU - Tadakuma, T.

AU - Satake, A.

AU - Fujiwara, K.

AU - Folkenberg, J. R.

AU - Hvam, Jørn Märcher

N1 - Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2005

Y1 - 2005

N2 - Stokes and anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga0.83)1–xAs/Al0.17Ga0.83As quantum-well (QW) heterostructure consisting of five QWs with different x values. Stokes PL spectra of this sample show a significant difference in PL intensity between the wells under indirect excitation conditions due to the existence of competitive resonant and nonresonant capture processes, while they exhibit a rather uniform PL intensity distribution under direct excitation. When the excitation wavelength is tuned to 810 nm for AS-PL detection, it is transparent to the five QWs and thus the photoabsorption can only occur in the GaAs (rear buffer and front cap) layers. It is found that the AS-PL spectra show a similar intensity distribution to the one observed under the indirect excitation. This result means that the AS-PL intensity distribution of the QWs is basically determined by the competitive capture of photoexcited carriers through the thick barriers, generated far from the five wells due to the nonlinear excitation processes in GaAs. ©2005 American Institute of Physics

AB - Stokes and anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga0.83)1–xAs/Al0.17Ga0.83As quantum-well (QW) heterostructure consisting of five QWs with different x values. Stokes PL spectra of this sample show a significant difference in PL intensity between the wells under indirect excitation conditions due to the existence of competitive resonant and nonresonant capture processes, while they exhibit a rather uniform PL intensity distribution under direct excitation. When the excitation wavelength is tuned to 810 nm for AS-PL detection, it is transparent to the five QWs and thus the photoabsorption can only occur in the GaAs (rear buffer and front cap) layers. It is found that the AS-PL spectra show a similar intensity distribution to the one observed under the indirect excitation. This result means that the AS-PL intensity distribution of the QWs is basically determined by the competitive capture of photoexcited carriers through the thick barriers, generated far from the five wells due to the nonlinear excitation processes in GaAs. ©2005 American Institute of Physics

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DO - 10.1063/1.2121928

M3 - Journal article

SN - 0021-8979

VL - 98

SP - 083527

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Stokes and anti-Stokes photoluminescence towards five different In-x(Al0.17Ga0.83)(1-x)As/Al0.17Ga0.83As quantum wells

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