STM-Induced Hydrogen Desorption via a Hole Resonance

Kurt Stokbro, C. Thirstrup, M. Sakurai, Ulrich Quaade, Ben Yu-Kuang Hu, F. Perez-Murano, Francois Grey

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    Abstract

    We report STM-induced desorption of H from Si(100)-H(2 X 1) at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at -7 V. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H 5 sigma hole resonance. The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at -7 V is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.
    Original languageEnglish
    JournalPhysical Review Letters
    Volume80
    Issue number12
    Pages (from-to)2618-2621
    ISSN0031-9007
    DOIs
    Publication statusPublished - 1998

    Bibliographical note

    Copyright (1998) by the American Physical Society.

    Keywords

    • EXCITATION
    • MANIPULATION
    • SURFACES
    • SCANNING TUNNELING MICROSCOPE

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