Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates

S. Schimmel; M. Kaiser; P. Hens; V. Jokubavicus; R. Liljedahl; J. W. Sun; R. Yakimova; Yiyu Ou; Haiyan Ou; M. K. Linnarsson; P. Wellmann; M. Syväjärvi

doi:10.4028/www.scientific.net/MSF.740-742.185

Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates

S. Schimmel, M. Kaiser, P. Hens, V. Jokubavicus, R. Liljedahl, J. W. Sun, R. Yakimova, Yiyu Ou, Haiyan Ou, M. K. Linnarsson, P. Wellmann, M. Syväjärvi

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2012
Publication date	2013
Pages	185-188
ISBN (Print)	9783037856246
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.740-742.185
Publication status	Published - 2013
Event	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation Duration: 2 Sept 2012 → 6 Sept 2012 https://www.ecscrm-2012.org/

Conference

Conference	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Country/Territory	Russian Federation
City	Saint-Petersburg
Period	02/09/2012 → 06/09/2012
Internet address	https://www.ecscrm-2012.org/

Series	Materials Science Forum
Volume	740-742
ISSN	0255-5476

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@inproceedings{a41bc0aa2d5342ea9ccda8b4fa4a5e08,

title = "Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates",

abstract = "Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.",

author = "S. Schimmel and M. Kaiser and P. Hens and V. Jokubavicus and R. Liljedahl and Sun, {J. W.} and R. Yakimova and Yiyu Ou and Haiyan Ou and Linnarsson, {M. K.} and P. Wellmann and M. Syv{\"a}j{\"a}rvi",

year = "2013",

doi = "10.4028/www.scientific.net/MSF.740-742.185",

language = "English",

isbn = "9783037856246",

series = "Materials Science Forum",

publisher = "Scientific.Net",

pages = "185--188",

booktitle = "Silicon Carbide and Related Materials 2012",

note = "European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) ; Conference date: 02-09-2012 Through 06-09-2012",

url = "https://www.ecscrm-2012.org/",

}

Schimmel, S, Kaiser, M, Hens, P, Jokubavicus, V, Liljedahl, R, Sun, JW, Yakimova, R, Ou, Y , Ou, H, Linnarsson, MK, Wellmann, P & Syväjärvi, M 2013, Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates. in Silicon Carbide and Related Materials 2012. Materials Science Forum, vol. 740-742, pp. 185-188, European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation, 02/09/2012. https://doi.org/10.4028/www.scientific.net/MSF.740-742.185

TY - GEN

T1 - Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates

AU - Schimmel, S.

AU - Kaiser, M.

AU - Hens, P.

AU - Jokubavicus, V.

AU - Liljedahl, R.

AU - Sun, J. W.

AU - Yakimova, R.

AU - Ou, Yiyu

AU - Ou, Haiyan

AU - Linnarsson, M. K.

AU - Wellmann, P.

AU - Syväjärvi, M.

PY - 2013

Y1 - 2013

N2 - Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.

AB - Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.

U2 - 10.4028/www.scientific.net/MSF.740-742.185

DO - 10.4028/www.scientific.net/MSF.740-742.185

M3 - Article in proceedings

SN - 9783037856246

T3 - Materials Science Forum

SP - 185

EP - 188

BT - Silicon Carbide and Related Materials 2012

T2 - European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)

Y2 - 2 September 2012 through 6 September 2012

ER -

Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates

Abstract

Conference

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