Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates

S. Schimmel, M. Kaiser, P. Hens, V. Jokubavicus, R. Liljedahl, J. W. Sun, R. Yakimova, Yiyu Ou, Haiyan Ou, M. K. Linnarsson, P. Wellmann, M. Syväjärvi

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.
Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2012
Publication date2013
Pages185-188
ISBN (Print)9783037856246
DOIs
Publication statusPublished - 2013
EventEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation
Duration: 2 Sep 20126 Sep 2012
https://www.ecscrm-2012.org/

Conference

ConferenceEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
CountryRussian Federation
CitySaint-Petersburg
Period02/09/201206/09/2012
Internet address
SeriesMaterials Science Forum
Volume740-742
ISSN0255-5476

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