Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.
|Conference||European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)|
|Period||02/09/2012 → 06/09/2012|
|Series||Materials Science Forum|