Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates

S. Schimmel, M. Kaiser, P. Hens, V. Jokubavicus, R. Liljedahl, J. W. Sun, R. Yakimova, Yiyu Ou, Haiyan Ou, M. K. Linnarsson, P. Wellmann, M. Syväjärvi

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Original languageEnglish
Publication date2012
Number of pages2
Publication statusPublished - 2012
EventEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation
Duration: 2 Sep 20126 Sep 2012
https://www.ecscrm-2012.org/

Conference

ConferenceEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
CountryRussian Federation
CitySaint-Petersburg
Period02/09/201206/09/2012
Internet address

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Schimmel, S., Kaiser, M., Hens, P., Jokubavicus, V., Liljedahl, R., Sun, J. W., Yakimova, R., Ou, Y., Ou, H., Linnarsson, M. K., Wellmann, P., & Syväjärvi, M. (2012). Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates. Abstract from European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation.