Status and challenges in electrical diagnostics of processing plasmas

Eugen Stamate

doi:10.1016/j.surfcoat.2014.09.070

Status and challenges in electrical diagnostics of processing plasmas

Eugen Stamate

Department of Energy Conversion and Storage

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

Dry processing based on reactive plasmas was the main driven force for micro- and recently nano-electronic industry. Once with the increasing in plasma complexity new diagnostics methods have been developed to ensure a proper process control during etching, thin film deposition, ion implantation or other steps in device fabrication. This work reviews some of the unconventional methods developed in the last two decays to measure the parameters of reactive plasmas including, the test function method, thermal probes, and plasma-sheath-lens probes. The negative ion detection and surface contamination in plasmas with a high degree of contamination are also addressed. (C) 2014 Elsevier B.V. All rights reserved.

Original language	English
Journal	Surface and Coatings Technology
Volume	260
Pages (from-to)	401-410
Number of pages	10
ISSN	0257-8972
DOIs	https://doi.org/10.1016/j.surfcoat.2014.09.070
Publication status	Published - 2014
Event	41st International Conference on Metallurgical Coatings and Thin Films - San Diego, CA, United States Duration: 28 Apr 2014 → 2 May 2014 Conference number: 41 http://www2.avs.org/conferences/icmctf/

Conference

Conference	41st International Conference on Metallurgical Coatings and Thin Films
Number	41
Country/Territory	United States
City	San Diego, CA
Period	28/04/2014 → 02/05/2014
Internet address	http://www2.avs.org/conferences/icmctf/

Keywords

MATERIALS
PHYSICS,
ENERGY-DISTRIBUTION FUNCTION
NEGATIVE-ION DETECTION
REACTIVE PLASMAS
LANGMUIR PROBE
ELECTRONEGATIVE PLASMAS
SURFACE CONDITION
ETCHING PLASMA
THERMAL PROBE
AR PLASMA
TECHNOLOGY
Plasma diagnostics
Electrical probes
Thermal probes
Plasma-sheath-lens

Access to Document

10.1016/j.surfcoat.2014.09.070

OpenUrl availability

Full text

Cite this

@inproceedings{9faeb57b64e44816ac6cfc2bc389819d,

title = "Status and challenges in electrical diagnostics of processing plasmas",

abstract = "Dry processing based on reactive plasmas was the main driven force for micro- and recently nano-electronic industry. Once with the increasing in plasma complexity new diagnostics methods have been developed to ensure a proper process control during etching, thin film deposition, ion implantation or other steps in device fabrication. This work reviews some of the unconventional methods developed in the last two decays to measure the parameters of reactive plasmas including, the test function method, thermal probes, and plasma-sheath-lens probes. The negative ion detection and surface contamination in plasmas with a high degree of contamination are also addressed. (C) 2014 Elsevier B.V. All rights reserved.",

keywords = "MATERIALS, PHYSICS,, ENERGY-DISTRIBUTION FUNCTION, NEGATIVE-ION DETECTION, REACTIVE PLASMAS, LANGMUIR PROBE, ELECTRONEGATIVE PLASMAS, SURFACE CONDITION, ETCHING PLASMA, THERMAL PROBE, AR PLASMA, TECHNOLOGY, Plasma diagnostics, Electrical probes, Thermal probes, Plasma-sheath-lens",

author = "Eugen Stamate",

year = "2014",

doi = "10.1016/j.surfcoat.2014.09.070",

language = "English",

volume = "260",

pages = "401--410",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

note = "41st International Conference on Metallurgical Coatings and Thin Films ; Conference date: 28-04-2014 Through 02-05-2014",

url = "http://www2.avs.org/conferences/icmctf/",

}

TY - GEN

T1 - Status and challenges in electrical diagnostics of processing plasmas

AU - Stamate, Eugen

N1 - Conference code: 41

PY - 2014

Y1 - 2014

N2 - Dry processing based on reactive plasmas was the main driven force for micro- and recently nano-electronic industry. Once with the increasing in plasma complexity new diagnostics methods have been developed to ensure a proper process control during etching, thin film deposition, ion implantation or other steps in device fabrication. This work reviews some of the unconventional methods developed in the last two decays to measure the parameters of reactive plasmas including, the test function method, thermal probes, and plasma-sheath-lens probes. The negative ion detection and surface contamination in plasmas with a high degree of contamination are also addressed. (C) 2014 Elsevier B.V. All rights reserved.

AB - Dry processing based on reactive plasmas was the main driven force for micro- and recently nano-electronic industry. Once with the increasing in plasma complexity new diagnostics methods have been developed to ensure a proper process control during etching, thin film deposition, ion implantation or other steps in device fabrication. This work reviews some of the unconventional methods developed in the last two decays to measure the parameters of reactive plasmas including, the test function method, thermal probes, and plasma-sheath-lens probes. The negative ion detection and surface contamination in plasmas with a high degree of contamination are also addressed. (C) 2014 Elsevier B.V. All rights reserved.

KW - MATERIALS

KW - PHYSICS,

KW - ENERGY-DISTRIBUTION FUNCTION

KW - NEGATIVE-ION DETECTION

KW - REACTIVE PLASMAS

KW - LANGMUIR PROBE

KW - ELECTRONEGATIVE PLASMAS

KW - SURFACE CONDITION

KW - ETCHING PLASMA

KW - THERMAL PROBE

KW - AR PLASMA

KW - TECHNOLOGY

KW - Plasma diagnostics

KW - Electrical probes

KW - Thermal probes

KW - Plasma-sheath-lens

U2 - 10.1016/j.surfcoat.2014.09.070

DO - 10.1016/j.surfcoat.2014.09.070

M3 - Conference article

SN - 0257-8972

VL - 260

SP - 401

EP - 410

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

T2 - 41st International Conference on Metallurgical Coatings and Thin Films

Y2 - 28 April 2014 through 2 May 2014

ER -

Status and challenges in electrical diagnostics of processing plasmas

Abstract

Conference

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this