Abstract
Janus transition metal dichalcogenides with a built-in structural cross-plane (cp) asymmetry have recently emerged as a new class of two-dimensional materials with a large cp dipole. Using first-principles calculations, and a tailored transport method, we demonstrate that stacking graphene and MoSSe Janus structures result in record high homogeneous doping of graphene and abrupt, atomically thin, cross-plane pn-junctions. We show how graphene in contrast to metals can act as electrodes to Janus stacks without screening the cp dipole and predict a large photocurrent response dominated by a cp transport channel in a few-layer stacked device. The photocurrent is above that of a corresponding thin-film silicon device illustrating the great potential of Janus stacks, for example, in photovoltaic devices.
Original language | English |
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Journal | Nano Letters |
Volume | 18 |
Issue number | 11 |
Pages (from-to) | 7275-7281 |
Number of pages | 7 |
ISSN | 1530-6984 |
DOIs | |
Publication status | Published - 2018 |
Keywords
- Janus MoSSe
- Graphene
- Optoelectronics
- Transition metal dichalcogenides
- Transport