Stacked Janus Device Concepts: Abrupt pn-Junctions and Cross-Plane Channels

Mattias Lau Nøhr Palsgaard, Tue Gunst*, Troels Markussen, Kristian Sommer Thygesen, Mads Brandbyge

*Corresponding author for this work

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Abstract

Janus transition metal dichalcogenides with a built-in structural cross-plane (cp) asymmetry have recently emerged as a new class of two-dimensional materials with a large cp dipole. Using first-principles calculations, and a tailored transport method, we demonstrate that stacking graphene and MoSSe Janus structures result in record high homogeneous doping of graphene and abrupt, atomically thin, cross-plane pn-junctions. We show how graphene in contrast to metals can act as electrodes to Janus stacks without screening the cp dipole and predict a large photocurrent response dominated by a cp transport channel in a few-layer stacked device. The photocurrent is above that of a corresponding thin-film silicon device illustrating the great potential of Janus stacks, for example, in photovoltaic devices.
Original languageEnglish
JournalNano letters
Volume18
Issue number11
Pages (from-to)7275-7281
Number of pages7
ISSN1530-6984
DOIs
Publication statusPublished - 2018

Keywords

  • Janus MoSSe
  • Graphene
  • Optoelectronics
  • Transition metal dichalcogenides
  • Transport

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