Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

S.H Izadpanah; B Jeppsson; Palle Jeppesen; P Jøndrup

doi:10.1109/EUMA.1974.332049

Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

S.H Izadpanah
, B Jeppsson
, Palle Jeppesen
, P Jøndrup

Technical University of Denmark

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

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Abstract

Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10Â¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.

Original language	English
Title of host publication	Microwave Conference, 1974. 4th European
Publisher	IEEE
Publication date	1974
Pages	242-246
DOIs	https://doi.org/10.1109/EUMA.1974.332049
Publication status	Published - 1974
Event	4th European Microwave Conference - Montreux, Switzerland Duration: 9 Sept 1974 → 12 Sept 1974 Conference number: 4 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4130641

Conference

Conference	4th European Microwave Conference
Number	4
Country/Territory	Switzerland
City	Montreux
Period	09/09/1974 → 12/09/1974
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=4130641

Bibliographical note

Copyright 1974 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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title = "Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills",

abstract = "Bistable switching with current drops of 40\% and switching times of 100 ps are obtained in pulsed operation of 10{\^A}¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.",

author = "S.H Izadpanah and B Jeppsson and Palle Jeppesen and P J{\o}ndrup",

note = "Copyright 1974 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.; 4th European Microwave Conference ; Conference date: 09-09-1974 Through 12-09-1974",

year = "1974",

doi = "10.1109/EUMA.1974.332049",

language = "English",

pages = "242--246",

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AU - Izadpanah, S.H

AU - Jeppsson, B

AU - Jeppesen, Palle

AU - Jøndrup, P

N1 - Conference code: 4

PY - 1974

Y1 - 1974

N2 - Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10Â¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.

AB - Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10Â¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.

U2 - 10.1109/EUMA.1974.332049

DO - 10.1109/EUMA.1974.332049

M3 - Conference abstract in proceedings

SP - 242

EP - 246

BT - Microwave Conference, 1974. 4th European

PB - IEEE

T2 - 4th European Microwave Conference

Y2 - 9 September 1974 through 12 September 1974

ER -

Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

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