Stabilized thin film heterostructure for electrochemical applications.

Vincenzo Esposito (Inventor), Simone Sanna (Inventor), Nini Pryds (Inventor), Søren Linderoth (Inventor)

Research output: Patent

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Abstract

The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depositing a layer A upon said buffer layer, said layer A being a layer of fast ionic conductor (A), said layer A having a thickness (tA) of 20 nm or less; d. depositing a layer B upon said layer A, said layer B being a layer of stable ionic conductor (B), said layer B having a thickness (tB ) of 150 nm or less; and e. repeating steps b. and c. a total of N times, such that N repeating pairs of layers (A/B) are built up, wherein N is 1 or more. The invention also provides a thin film multi-layered heterostructure as such, and the combination of a thin film multi-layered heterostructure and a substrate. The heterostructure finds use as an electroceramic, in particular in SOFCs.
Original languageEnglish
IPCH01M8/02; H01M8/12
Patent numberWO2015004237
Filing date15/01/2015
CountryInternational Bureau of the World Intellectual Property Organization (WIPO)
Priority date10/07/2013
Priority numberEP20130175901
Publication statusPublished - 2015

Cite this

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title = "Stabilized thin film heterostructure for electrochemical applications.",
abstract = "The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depositing a layer A upon said buffer layer, said layer A being a layer of fast ionic conductor (A), said layer A having a thickness (tA) of 20 nm or less; d. depositing a layer B upon said layer A, said layer B being a layer of stable ionic conductor (B), said layer B having a thickness (tB ) of 150 nm or less; and e. repeating steps b. and c. a total of N times, such that N repeating pairs of layers (A/B) are built up, wherein N is 1 or more. The invention also provides a thin film multi-layered heterostructure as such, and the combination of a thin film multi-layered heterostructure and a substrate. The heterostructure finds use as an electroceramic, in particular in SOFCs.",
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TY - PAT

T1 - Stabilized thin film heterostructure for electrochemical applications.

AU - Esposito, Vincenzo

AU - Sanna, Simone

AU - Pryds, Nini

AU - Linderoth, Søren

PY - 2015

Y1 - 2015

N2 - The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depositing a layer A upon said buffer layer, said layer A being a layer of fast ionic conductor (A), said layer A having a thickness (tA) of 20 nm or less; d. depositing a layer B upon said layer A, said layer B being a layer of stable ionic conductor (B), said layer B having a thickness (tB ) of 150 nm or less; and e. repeating steps b. and c. a total of N times, such that N repeating pairs of layers (A/B) are built up, wherein N is 1 or more. The invention also provides a thin film multi-layered heterostructure as such, and the combination of a thin film multi-layered heterostructure and a substrate. The heterostructure finds use as an electroceramic, in particular in SOFCs.

AB - The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depositing a layer A upon said buffer layer, said layer A being a layer of fast ionic conductor (A), said layer A having a thickness (tA) of 20 nm or less; d. depositing a layer B upon said layer A, said layer B being a layer of stable ionic conductor (B), said layer B having a thickness (tB ) of 150 nm or less; and e. repeating steps b. and c. a total of N times, such that N repeating pairs of layers (A/B) are built up, wherein N is 1 or more. The invention also provides a thin film multi-layered heterostructure as such, and the combination of a thin film multi-layered heterostructure and a substrate. The heterostructure finds use as an electroceramic, in particular in SOFCs.

M3 - Patent

M1 - WO2015004237

Y2 - 2015/01/15

ER -