Stability of a Solid Oxide Cell Stack under Direct Internal-Reforming of Hydrogen-Blended Methane

Ya-Fei Tang, An-Qi Wu, Bei-Bei Han, Hua Liu, Shan-Jun Bao, Wang-Lin Lin, Ming Chen, Wan Bing Guan*, Subhash C. Singhal

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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In this work, the long-term stability and degradation mechanism of a direct internal-reforming solid oxide fuel cell stack (IR-SOFC stack) using hydrogen-blended methane steam reforming were investigated. An overall degradation rate of 2.3%·kh–1 was found after the stack was operated for 3000 hours, indicating a good long-term stability. However, the voltages of the two cells in the stack were increased at the rates of 3.38 mV·kh–1 and 3.78 mV·kh–1, while the area specific resistances of the three metal interconnects in the stack were increased to 0.276 Ω·cm2, 0.254 Ω·cm2 and 0.249 Ω·cm2. The degradation of the stack might be caused by segregation of chromium on the surface of metal interconnects and the formation of SrCrO4 insulating phase in the current collecting layer of the cathode, which result in an increase in the interfacial resistance and a decrease in the stack performance. The long-term performance of a flat-tube IR-SOFC stack could be further improved by suitably coating the metal interconnect surface. This work provides theoretical and experimental guideline for the application of hydrogen-blended methane steam reforming in flat-tube IR-SOFC stacks.
Original languageEnglish
Article number2314001
JournalJournal of Electrochemistry
Issue number1
Number of pages9
Publication statusPublished - 2024


  • Hydrogen-blended methane steam
  • Internal-reforming
  • Stability
  • Solid oxide fuel cell stack


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