Stability investigation for InP DHBT mm‐wave power amplifier

Lei Yan, Tom Keinicke Johansen, Jacob Kammersgaard

    Research output: Contribution to journalJournal articleResearchpeer-review


    In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K‐Δs pair, linear three‐port graphical analysis, system identifications, circuit modal analysis, and normalized determinant function are all reviewed. The corresponding techniques are employed to predict the occurrence of instability at 15 GHz observed during measurements on a fabricated monolithic microwave integrated circuit power amplifier. Experimental results from a redesigned power amplifier with improved stability are presented to confirm that the previously detected oscillation loop is removed using odd‐mode stabilization resistors with the correct choice of values and locations. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE 23: 662–674, 2013.
    Original languageEnglish
    JournalInternational Journal of R F and Microwave Computer-Aided Engineering (Print Edition)
    Issue number6
    Pages (from-to)662-674
    Publication statusPublished - 2013


    • mm-wave
    • InP DHBT
    • Power amplifier
    • Even/odd-mode stability
    • Biasing line
    • Push-pull
    • Pole-zero identification
    • Modal analysis
    • Return ratio


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