Stability and mobility of defect clusters and dislocation loops in metals

Y.N. Osetsky, D.J. Bacon, A. Serra, B.N. Singh, S.I. Golubov

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    According to the production bias model, glissile defect clusters and small dislocation loops play an important role in the microstructural evolution during irradiation under cascade damage conditions. The atomic scale computer simulations carried out in recent years have clarified many questions about the structure and properties of glissile clusters of self-interstitial atoms that are formed directly in the cascade volume. It has been found that such clusters consist of sets of crowdions and are highly mobile in the crowdion direction. Very recently, one-dimensional glide of similar character has been observed in the computer simulation of small vacancy loops in alpha-Fe. In the present paper we summarise results obtained by molecular dynamics simulations of defect clusters and small dislocation loops in alpha-Fe(bcc) and Cu(fcc). The structure and stability of vacancy and interstitial loops are reviewed, and the dynamics of glissile clusters assessed. The relevance and importance of these results in establishing a better understanding of the observed differences in the damage accumulation behaviour between bcc and fee metals irradiated under cascade damage conditions are pointed out. (C) 2000 Elsevier Science B.V. All rights reserved.
    Original languageEnglish
    JournalJournal of Nuclear Materials
    Volume276
    Pages (from-to)65-77
    ISSN0022-3115
    DOIs
    Publication statusPublished - 2000
    EventInternational Workshop on Basic Aspects of Differences in Irradiation Effects Between FCC, BCC and HCP Metals and Alloys - Cangas de Onis, Spain
    Duration: 15 Oct 199820 Oct 1998

    Workshop

    WorkshopInternational Workshop on Basic Aspects of Differences in Irradiation Effects Between FCC, BCC and HCP Metals and Alloys
    Country/TerritorySpain
    CityCangas de Onis
    Period15/10/199820/10/1998

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