Sputtering of Ge(001): transition between dynamic scaling regimes

D.-M. Smilgies; P.J. Eng; E. Landemark; M. Nielsen

doi:10.1016/S0039-6028(96)01541-5

Sputtering of Ge(001): transition between dynamic scaling regimes

D.-M. Smilgies
, P.J. Eng
, E. Landemark
, M. Nielsen

Research output: Contribution to journal › Journal article › Research

Abstract

We have studied the dynamic behavior of the Ge(001) surface during sputtering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and sputter current which are separated by a sharp transition. The boundary between these two regimes follows an Arrhenius behavior with an activation energy of about 1 eV for the relevant diffusion process.

Original language	English
Journal	Surface Science
Volume	377
Issue number	1-3
Pages (from-to)	1038-1041
ISSN	0039-6028
DOIs	https://doi.org/10.1016/S0039-6028(96)01541-5
Publication status	Published - 1997

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title = "Sputtering of Ge(001): transition between dynamic scaling regimes",

abstract = " We have studied the dynamic behavior of the Ge(001) surface during sputtering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and sputter current which are separated by a sharp transition. The boundary between these two regimes follows an Arrhenius behavior with an activation energy of about 1 eV for the relevant diffusion process. ",

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author = "D.-M. Smilgies and P.J. Eng and E. Landemark and M. Nielsen",

year = "1997",

doi = "10.1016/S0039-6028(96)01541-5",

language = "English",

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T1 - Sputtering of Ge(001): transition between dynamic scaling regimes

AU - Smilgies, D.-M.

AU - Eng, P.J.

AU - Landemark, E.

AU - Nielsen, M.

PY - 1997

Y1 - 1997

N2 - We have studied the dynamic behavior of the Ge(001) surface during sputtering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and sputter current which are separated by a sharp transition. The boundary between these two regimes follows an Arrhenius behavior with an activation energy of about 1 eV for the relevant diffusion process.

AB - We have studied the dynamic behavior of the Ge(001) surface during sputtering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and sputter current which are separated by a sharp transition. The boundary between these two regimes follows an Arrhenius behavior with an activation energy of about 1 eV for the relevant diffusion process.

KW - Nye funktionelle materialer

U2 - 10.1016/S0039-6028(96)01541-5

DO - 10.1016/S0039-6028(96)01541-5

M3 - Journal article

SN - 0039-6028

VL - 377

SP - 1038

EP - 1041

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Sputtering of Ge(001): transition between dynamic scaling regimes

Abstract

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