Sputtering of Ge(001): transition between dynamic scaling regimes

D.-M. Smilgies, P.J. Eng, E. Landemark, M. Nielsen

    Research output: Contribution to journalJournal articleResearch

    Abstract

    We have studied the dynamic behavior of the Ge(001) surface during sputtering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and sputter current which are separated by a sharp transition. The boundary between these two regimes follows an Arrhenius behavior with an activation energy of about 1 eV for the relevant diffusion process.
    Original languageEnglish
    JournalSurface Science
    Volume377
    Issue number1-3
    Pages (from-to)1038-1041
    ISSN0039-6028
    DOIs
    Publication statusPublished - 1997

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