Sputtering of cryogenic films of hydrogen by keV ions: Thickness dependence and surface morphology

Jørgen Schou; Noel Hilleret

doi:10.1016/j.nimb.2009.05.024

Sputtering of cryogenic films of hydrogen by keV ions: Thickness dependence and surface morphology

Jørgen Schou
, Noel Hilleret

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

The sputtering yield induced by keV hydrogen ions measured at CERN and at Risø National Laboratory for solid H2 and D2 at temperatures below 4.2 K decreases with increasing film thickness from about 100 x 10(15)molecules/cm2. For a film thickness comparable to or larger than the ion range the data from Risø show a slight increase, whereas the yield from CERN continues to decrease up to very large film thicknesses, i.e. one order of magnitude larger than the ion range. The different behavior of the yield is discussed in terms of the probable growth modes of the films. The films produced at the Risø setup are quench-condensed films, while those produced at CERN are supposed to grow with large hydrogen aggregates on top of a thin bottom layer.

Original language	English
Journal	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume	267
Issue number	16
Pages (from-to)	2748-2751
ISSN	0168-583X
DOIs	https://doi.org/10.1016/j.nimb.2009.05.024
Publication status	Published - 2009
Event	23rd International Conference on Atomic Collisions in Solids - Phalaborwa, South Africa Duration: 17 Aug 2008 → 22 Aug 2008 Conference number: 23

Conference

Conference	23rd International Conference on Atomic Collisions in Solids
Number	23
Country/Territory	South Africa
City	Phalaborwa
Period	17/08/2008 → 22/08/2008

Keywords

Sputtering
Solid hydrogen
Low temperature
Growth of films

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10.1016/j.nimb.2009.05.024

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title = "Sputtering of cryogenic films of hydrogen by keV ions: Thickness dependence and surface morphology",

abstract = "The sputtering yield induced by keV hydrogen ions measured at CERN and at Ris{\o} National Laboratory for solid H2 and D2 at temperatures below 4.2 K decreases with increasing film thickness from about 100 x 10(15)molecules/cm2. For a film thickness comparable to or larger than the ion range the data from Ris{\o} show a slight increase, whereas the yield from CERN continues to decrease up to very large film thicknesses, i.e. one order of magnitude larger than the ion range. The different behavior of the yield is discussed in terms of the probable growth modes of the films. The films produced at the Ris{\o} setup are quench-condensed films, while those produced at CERN are supposed to grow with large hydrogen aggregates on top of a thin bottom layer.",

keywords = "Sputtering, Solid hydrogen, Low temperature, Growth of films",

author = "J{\o}rgen Schou and Noel Hilleret",

year = "2009",

doi = "10.1016/j.nimb.2009.05.024",

language = "English",

volume = "267",

pages = "2748--2751",

journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "16",

note = "23rd International Conference on Atomic Collisions in Solids ; Conference date: 17-08-2008 Through 22-08-2008",

}

Sputtering of cryogenic films of hydrogen by keV ions: Thickness dependence and surface morphology. / Schou, Jørgen; Hilleret, Noel.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 267, No. 16, 2009, p. 2748-2751.

Research output: Contribution to journal › Conference article › Research › peer-review

TY - GEN

T1 - Sputtering of cryogenic films of hydrogen by keV ions

T2 - 23rd International Conference on Atomic Collisions in Solids

AU - Schou, Jørgen

AU - Hilleret, Noel

N1 - Conference code: 23

PY - 2009

Y1 - 2009

N2 - The sputtering yield induced by keV hydrogen ions measured at CERN and at Risø National Laboratory for solid H2 and D2 at temperatures below 4.2 K decreases with increasing film thickness from about 100 x 10(15)molecules/cm2. For a film thickness comparable to or larger than the ion range the data from Risø show a slight increase, whereas the yield from CERN continues to decrease up to very large film thicknesses, i.e. one order of magnitude larger than the ion range. The different behavior of the yield is discussed in terms of the probable growth modes of the films. The films produced at the Risø setup are quench-condensed films, while those produced at CERN are supposed to grow with large hydrogen aggregates on top of a thin bottom layer.

AB - The sputtering yield induced by keV hydrogen ions measured at CERN and at Risø National Laboratory for solid H2 and D2 at temperatures below 4.2 K decreases with increasing film thickness from about 100 x 10(15)molecules/cm2. For a film thickness comparable to or larger than the ion range the data from Risø show a slight increase, whereas the yield from CERN continues to decrease up to very large film thicknesses, i.e. one order of magnitude larger than the ion range. The different behavior of the yield is discussed in terms of the probable growth modes of the films. The films produced at the Risø setup are quench-condensed films, while those produced at CERN are supposed to grow with large hydrogen aggregates on top of a thin bottom layer.

KW - Sputtering

KW - Solid hydrogen

KW - Low temperature

KW - Growth of films

U2 - 10.1016/j.nimb.2009.05.024

DO - 10.1016/j.nimb.2009.05.024

M3 - Conference article

SN - 0168-583X

VL - 267

SP - 2748

EP - 2751

JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

IS - 16

Y2 - 17 August 2008 through 22 August 2008

ER -

Sputtering of cryogenic films of hydrogen by keV ions: Thickness dependence and surface morphology

Abstract

Conference

Keywords

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