Sputtering of cryogenic films of hydrogen by keV ions: Thickness dependence and surface morphology

Jørgen Schou, Noel Hilleret

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

The sputtering yield induced by keV hydrogen ions measured at CERN and at Risø National Laboratory for solid H2 and D2 at temperatures below 4.2 K decreases with increasing film thickness from about 100 x 10(15)molecules/cm2. For a film thickness comparable to or larger than the ion range the data from Risø show a slight increase, whereas the yield from CERN continues to decrease up to very large film thicknesses, i.e. one order of magnitude larger than the ion range. The different behavior of the yield is discussed in terms of the probable growth modes of the films. The films produced at the Risø setup are quench-condensed films, while those produced at CERN are supposed to grow with large hydrogen aggregates on top of a thin bottom layer.
Original languageEnglish
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume267
Issue number16
Pages (from-to)2748-2751
ISSN0168-583X
DOIs
Publication statusPublished - 2009
Event23rd International Conference on Atomic Collisions in Solids - Phalaborwa, South Africa
Duration: 17 Aug 200822 Aug 2008
Conference number: 23

Conference

Conference23rd International Conference on Atomic Collisions in Solids
Number23
CountrySouth Africa
CityPhalaborwa
Period17/08/200822/08/2008

Keywords

  • Sputtering
  • Solid hydrogen
  • Low temperature
  • Growth of films

Fingerprint Dive into the research topics of 'Sputtering of cryogenic films of hydrogen by keV ions: Thickness dependence and surface morphology'. Together they form a unique fingerprint.

Cite this