We report on the enhancement of the spontaneous emission rate of single semiconductor quantum dots embedded in a photonic crystal waveguide with engineered disorder. Random high-Q cavities, that are signature of Anderson localization, are measured in photoluminescence experiments and appear in the slow light regime of the waveguide mode. Time resolved experiments show a 15-fold enhancement of the spontaneous emission rate, with coupling efficiencies of single photons into Anderson localized cavity modes of 94%. These results show that the performances of Anderson-localized cavities are comparable to state-of-the-art nano-cavities, proving the potentiality of disorder in light confinement.
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|Publication status||Published - 2010|
|Event||Nano Science Engineering : Active Photonic Materials III - San Diego, CA, USA|
Duration: 1 Jan 2010 → …
|Conference||Nano Science Engineering : Active Photonic Materials III|
|City||San Diego, CA, USA|
|Period||01/01/2010 → …|