Abstract
We report on the enhancement of the spontaneous emission rate of single semiconductor quantum dots embedded in a photonic crystal waveguide with engineered disorder. Random high-Q cavities, that are signature of Anderson localization, are measured in photoluminescence experiments and appear in the slow light regime of the waveguide mode. Time resolved experiments show a 15-fold enhancement of the spontaneous emission rate, with coupling efficiencies of single photons into Anderson localized cavity modes of 94%. These results show that the performances of Anderson-localized cavities are comparable to state-of-the-art nano-cavities, proving the potentiality of disorder in light confinement.
| Original language | English |
|---|---|
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 7756 |
| Pages (from-to) | 31 |
| ISSN | 0277-786X |
| Publication status | Published - 2010 |
| Event | Nano Science Engineering : Active Photonic Materials III - San Diego, CA, USA Duration: 1 Jan 2010 → … |
Conference
| Conference | Nano Science Engineering : Active Photonic Materials III |
|---|---|
| City | San Diego, CA, USA |
| Period | 01/01/2010 → … |