Spontaneous dissociation of a conjugated molecule on the Si(100) surface

Rong Lin, Michael Galili, Ulrich Quaade, Mads Brandbyge, Thomas Bjørnholm, A.D. Esposti, F. Biscarini, Kurt Stokbro

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    Abstract

    The adsorption mechanism of alpha-sexithiophene (alpha-6T) on the clean Si(100)-(2x1) surface has been investigated using scanning tunneling microscopy (STM) and first principles electronic structure calculations. We find that at submonolayer coverage, the alpha-6T molecules are not stable and dissociate into monomers. We observe two different configurations of the monomers and have discussed the corresponding adsorption geometries based on theoretical calculations. The calculations elucidate how the fragments are absorbed on the surface, giving rise to the observed STM images. With increasing coverage, the STM images show the existence of complete alpha-6T molecules. In addition, results of the adsorption behavior of alpha-6T molecules on the H-passivated Si(100)-(2x1) surface are reported. On this surface the molecules are highly mobile at room temperature due to the weak molecule-substrate interaction. The STM results also indicate that they can easily be anchored at the defect sites.
    Original languageEnglish
    JournalJournal of Chemical Physics
    Volume117
    Issue number1
    Pages (from-to)321-330
    ISSN0021-9606
    DOIs
    Publication statusPublished - 2002

    Bibliographical note

    Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • ELECTRONIC-STRUCTURE
    • FIELD-EFFECT TRANSISTOR
    • SILICON(001) SURFACE
    • ORGANIC MONOLAYERS
    • ATOMIC-FORCE MICROSCOPY
    • THERMAL-DESORPTION
    • ELECTRICAL CHARACTERISTICS
    • SEMIEMPIRICAL METHODS
    • SCANNING-TUNNELING-MICROSCOPY
    • ENERGY LOSS SPECTROSCOPY

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