Spin injection from Co2MnGa into an InGaAs quantum well

M. C. Hickey, Christian Danvad Damsgaard, S. N. Holmes, I. Farrer, G. A. C Jones, D. A. Ritchie, Claus Schelde Jacobsen, Jørn Bindslev Hansen, M. Pepper

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We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifetime and spin detection efficiency (22 +/- 4%). This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency increases by a factor of approximately 2 as compared with an off-stoichiometric Co2.4Mn1.6Ga injector. (C) 2008 American Institute of Physics.
Original languageEnglish
JournalApplied Physics Letters
Issue number23
Pages (from-to)232101
Publication statusPublished - 2008

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Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.



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