Spin injection from Co2MnGa into an InGaAs quantum well

M. C. Hickey, Christian Danvad Damsgaard, S. N. Holmes, I. Farrer, G. A. C Jones, D. A. Ritchie, Claus Schelde Jacobsen, Jørn Bindslev Hansen, M. Pepper

Research output: Contribution to journalJournal articleResearchpeer-review

342 Downloads (Pure)

Abstract

We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifetime and spin detection efficiency (22 +/- 4%). This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency increases by a factor of approximately 2 as compared with an off-stoichiometric Co2.4Mn1.6Ga injector. (C) 2008 American Institute of Physics.
Original languageEnglish
JournalApplied Physics Letters
Volume92
Issue number23
Pages (from-to)232101
ISSN0003-6951
DOIs
Publication statusPublished - 2008

Bibliographical note

Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

  • SEMICONDUCTOR

Cite this

Hickey, M. C., Damsgaard, C. D., Holmes, S. N., Farrer, I., Jones, G. A. C., Ritchie, D. A., Jacobsen, C. S., Hansen, J. B., & Pepper, M. (2008). Spin injection from Co2MnGa into an InGaAs quantum well. Applied Physics Letters, 92(23), 232101. https://doi.org/10.1063/1.2938418