Abstract
We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifetime and spin detection efficiency (22 +/- 4%). This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency increases by a factor of approximately 2 as compared with an off-stoichiometric Co2.4Mn1.6Ga injector. (C) 2008 American Institute of Physics.
Original language | English |
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Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 23 |
Pages (from-to) | 232101 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 2008 |
Bibliographical note
Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Keywords
- SEMICONDUCTOR