Spin injection from Co2MnGa into an InGaAs quantum well

M. C. Hickey; Christian Danvad Damsgaard; S. N. Holmes; I. Farrer; G. A. C Jones; D. A. Ritchie; Claus Schelde Jacobsen; Jørn Bindslev Hansen; M. Pepper

doi:10.1063/1.2938418

Spin injection from Co2MnGa into an InGaAs quantum well

M. C. Hickey, Christian Danvad Damsgaard, S. N. Holmes, I. Farrer, G. A. C Jones, D. A. Ritchie, Claus Schelde Jacobsen, Jørn Bindslev Hansen, M. Pepper

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Abstract

We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifetime and spin detection efficiency (22 +/- 4%). This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency increases by a factor of approximately 2 as compared with an off-stoichiometric Co2.4Mn1.6Ga injector. (C) 2008 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	92
Issue number	23
Pages (from-to)	232101
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.2938418
Publication status	Published - 2008

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Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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SEMICONDUCTOR

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title = "Spin injection from Co2MnGa into an InGaAs quantum well",

abstract = "We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifetime and spin detection efficiency (22 +/- 4\%). This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency increases by a factor of approximately 2 as compared with an off-stoichiometric Co2.4Mn1.6Ga injector. (C) 2008 American Institute of Physics.",

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note = "Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

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doi = "10.1063/1.2938418",

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T1 - Spin injection from Co2MnGa into an InGaAs quantum well

AU - Hickey, M. C.

AU - Damsgaard, Christian Danvad

AU - Holmes, S. N.

AU - Farrer, I.

AU - Jones, G. A. C

AU - Ritchie, D. A.

AU - Jacobsen, Claus Schelde

AU - Hansen, Jørn Bindslev

AU - Pepper, M.

N1 - Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2008

Y1 - 2008

N2 - We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifetime and spin detection efficiency (22 +/- 4%). This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency increases by a factor of approximately 2 as compared with an off-stoichiometric Co2.4Mn1.6Ga injector. (C) 2008 American Institute of Physics.

AB - We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifetime and spin detection efficiency (22 +/- 4%). This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency increases by a factor of approximately 2 as compared with an off-stoichiometric Co2.4Mn1.6Ga injector. (C) 2008 American Institute of Physics.

KW - SEMICONDUCTOR

U2 - 10.1063/1.2938418

DO - 10.1063/1.2938418

M3 - Journal article

SN - 0003-6951

VL - 92

SP - 232101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Spin injection from Co2MnGa into an InGaAs quantum well

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