Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well

M.C. Hickey; Christian Danvad Damsgaard; I Farrer; S N Holmes; A Husmann; Jørn Bindslev Hansen; Claus Schelde Jacobsen; D A Ritchie; M Pepper

doi:10.1063/1.1949722

Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well

M.C. Hickey, Christian Danvad Damsgaard, I Farrer, S N Holmes, A Husmann, Jørn Bindslev Hansen, Claus Schelde Jacobsen, D A Ritchie, M Pepper

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Abstract

Electrical spin injection in a narrow [100] In0.2Ga0.8As quantum well in a GaAs p-i-n optical device is reported. The quantum well is located 300 nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe and the Heusler alloy Co2.4Mn1.6Ga grown by molecular-beam epitaxy. At 5 K, the injected electron spin polarizations for Fe and Co2.4Mn1.6Ga injectors are 31% and 13%, respectively. Optical detection is carried out in the oblique Hanle geometry. A dynamic nuclear polarization effect below 10 K enhances the magnetic field seen by the injected spins in both devices. The Co2.4Mn1.6Ga thin films are found to have a transport spin polarization of similar to 50% by point contact Andreev reflection conductivity measurements. (c) 2005 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	86
Issue number	25
Pages (from-to)	252106
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.1949722
Publication status	Published - 2005

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Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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title = "Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well",

abstract = "Electrical spin injection in a narrow [100] In0.2Ga0.8As quantum well in a GaAs p-i-n optical device is reported. The quantum well is located 300 nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe and the Heusler alloy Co2.4Mn1.6Ga grown by molecular-beam epitaxy. At 5 K, the injected electron spin polarizations for Fe and Co2.4Mn1.6Ga injectors are 31% and 13%, respectively. Optical detection is carried out in the oblique Hanle geometry. A dynamic nuclear polarization effect below 10 K enhances the magnetic field seen by the injected spins in both devices. The Co2.4Mn1.6Ga thin films are found to have a transport spin polarization of similar to 50% by point contact Andreev reflection conductivity measurements. (c) 2005 American Institute of Physics.",

author = "M.C. Hickey and Damsgaard, {Christian Danvad} and I Farrer and Holmes, {S N} and A Husmann and Hansen, {J{\o}rn Bindslev} and Jacobsen, {Claus Schelde} and Ritchie, {D A} and M Pepper",

note = "Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "2005",

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language = "English",

volume = "86",

pages = "252106",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well

AU - Hickey, M.C.

AU - Damsgaard, Christian Danvad

AU - Farrer, I

AU - Holmes, S N

AU - Husmann, A

AU - Hansen, Jørn Bindslev

AU - Jacobsen, Claus Schelde

AU - Ritchie, D A

AU - Pepper, M

N1 - Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2005

Y1 - 2005

N2 - Electrical spin injection in a narrow [100] In0.2Ga0.8As quantum well in a GaAs p-i-n optical device is reported. The quantum well is located 300 nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe and the Heusler alloy Co2.4Mn1.6Ga grown by molecular-beam epitaxy. At 5 K, the injected electron spin polarizations for Fe and Co2.4Mn1.6Ga injectors are 31% and 13%, respectively. Optical detection is carried out in the oblique Hanle geometry. A dynamic nuclear polarization effect below 10 K enhances the magnetic field seen by the injected spins in both devices. The Co2.4Mn1.6Ga thin films are found to have a transport spin polarization of similar to 50% by point contact Andreev reflection conductivity measurements. (c) 2005 American Institute of Physics.

AB - Electrical spin injection in a narrow [100] In0.2Ga0.8As quantum well in a GaAs p-i-n optical device is reported. The quantum well is located 300 nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe and the Heusler alloy Co2.4Mn1.6Ga grown by molecular-beam epitaxy. At 5 K, the injected electron spin polarizations for Fe and Co2.4Mn1.6Ga injectors are 31% and 13%, respectively. Optical detection is carried out in the oblique Hanle geometry. A dynamic nuclear polarization effect below 10 K enhances the magnetic field seen by the injected spins in both devices. The Co2.4Mn1.6Ga thin films are found to have a transport spin polarization of similar to 50% by point contact Andreev reflection conductivity measurements. (c) 2005 American Institute of Physics.

U2 - 10.1063/1.1949722

DO - 10.1063/1.1949722

M3 - Journal article

SN - 0003-6951

VL - 86

SP - 252106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well

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