Spectral hole-burning and carrier-heating dynamics in quantum-dot amplifiers: Comparison with bulk amplifiers

P. Borri, W. Langbein, Jørn Märcher Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The ultrafast gain dynamics in an electrically pumped InAs/InGaAs/GaAs quantum-dot amplifier are measured at room temperature with femtosecond resolution, and compared with results on an InGaAsP bulk amplifier. The role of spectral hole burning and carrier heating in the recovery of the gain compression is investigated. Reduced carrier heating for both gain and refractive index dynamics of the quantum-dot device is found, which is a promising prerequisite for high-speed applications.
Original languageEnglish
JournalPhysica Status Solidi B
Volume224
Issue number2
Pages (from-to)419-423
ISSN0370-1972
Publication statusPublished - 2001

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