Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

Paola Borri; Wolfgang Werner Langbein; Jørn Märcher Hvam; F. Heinrichsdorff; M.-H. Mao; D. Bimberg

doi:10.1109/2944.865110

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

Paola Borri, Wolfgang Werner Langbein, Jørn Märcher Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

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Abstract

The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH for both gain and refractive index dynamics of the QD devices is found, which is a promising prerequisite for high-speed applications. This reduction is attributed to reduced free-carrier absorption-induced heating caused by the small carrier density necessary to provide amplification in these low-dimensional systems

Original language	English
Journal	I E E E Journal on Selected Topics in Quantum Electronics
Volume	6
Issue number	3
Pages (from-to)	544-551
ISSN	1077-260X
DOIs	https://doi.org/10.1109/2944.865110
Publication status	Published - 2000

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Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@article{75e44bd9cbd84fa585d9a06170bf0cc6,

title = "Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers",

abstract = "The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH for both gain and refractive index dynamics of the QD devices is found, which is a promising prerequisite for high-speed applications. This reduction is attributed to reduced free-carrier absorption-induced heating caused by the small carrier density necessary to provide amplification in these low-dimensional systems",

author = "Paola Borri and Langbein, {Wolfgang Werner} and Hvam, {J{\o}rn M{\"a}rcher} and F. Heinrichsdorff and M.-H. Mao and D. Bimberg",

note = "Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE",

year = "2000",

doi = "10.1109/2944.865110",

language = "English",

volume = "6",

pages = "544--551",

journal = "I E E E Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers",

number = "3",

}

TY - JOUR

T1 - Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

AU - Borri, Paola

AU - Langbein, Wolfgang Werner

AU - Hvam, Jørn Märcher

AU - Heinrichsdorff, F.

AU - Mao, M.-H.

AU - Bimberg, D.

N1 - Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2000

Y1 - 2000

N2 - The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH for both gain and refractive index dynamics of the QD devices is found, which is a promising prerequisite for high-speed applications. This reduction is attributed to reduced free-carrier absorption-induced heating caused by the small carrier density necessary to provide amplification in these low-dimensional systems

AB - The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH for both gain and refractive index dynamics of the QD devices is found, which is a promising prerequisite for high-speed applications. This reduction is attributed to reduced free-carrier absorption-induced heating caused by the small carrier density necessary to provide amplification in these low-dimensional systems

U2 - 10.1109/2944.865110

DO - 10.1109/2944.865110

M3 - Journal article

SN - 1077-260X

VL - 6

SP - 544

EP - 551

JO - I E E E Journal on Selected Topics in Quantum Electronics

JF - I E E E Journal on Selected Topics in Quantum Electronics

IS - 3

ER -

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

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