Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Yu Polubavkina, F. I. Zubov, E. Moiseev, N. V. Kryzhanovskaya, M. V. Maximov, Elizaveta Semenova, Kresten Yvind, L. V. Asryan, A. E. Zhukov

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.
Original languageEnglish
JournalSemiconductors
Volume51
Issue number2
Pages (from-to)254-259
ISSN1063-7826
DOIs
Publication statusPublished - 2017

Bibliographical note

Original Russian Text © Yu.S. Polubavkina, F.I. Zubov, E.I. Moiseev, N.V. Kryzhanovskaya, M.V. Maximov, E.S. Semenova, K. Yvind, L.V. Asryan, A.E. Zhukov, 2017, published
in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 263–268.

Keywords

  • Physics
  • Magnetism, Magnetic Materials
  • Physics, general
  • SC12

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