Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Yu Polubavkina; F. I. Zubov; E. Moiseev; N. V. Kryzhanovskaya; M. V. Maximov; Elizaveta Semenova; Kresten Yvind; L. V. Asryan; A. E. Zhukov

doi:10.1134/S1063782617020142

Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Yu Polubavkina, F. I. Zubov, E. Moiseev, N. V. Kryzhanovskaya, M. V. Maximov, Elizaveta Semenova, Kresten Yvind, L. V. Asryan, A. E. Zhukov

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.

Original language	English
Journal	Semiconductors
Volume	51
Issue number	2
Pages (from-to)	254-259
ISSN	1063-7826
DOIs	https://doi.org/10.1134/S1063782617020142
Publication status	Published - 2017

Bibliographical note

Original Russian Text © Yu.S. Polubavkina, F.I. Zubov, E.I. Moiseev, N.V. Kryzhanovskaya, M.V. Maximov, E.S. Semenova, K. Yvind, L.V. Asryan, A.E. Zhukov, 2017, published
in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 263–268.

Keywords

Physics
Magnetism, Magnetic Materials
Physics, general
SC12

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10.1134/S1063782617020142

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title = "Specific features of waveguide recombination in laser structures with asymmetric barrier layers",

abstract = "The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.",

keywords = "Physics, Magnetism, Magnetic Materials, Physics, general, SC12",

author = "Yu Polubavkina and Zubov, {F. I.} and E. Moiseev and Kryzhanovskaya, {N. V.} and Maximov, {M. V.} and Elizaveta Semenova and Kresten Yvind and Asryan, {L. V.} and Zhukov, {A. E.}",

note = "Original Russian Text {\textcopyright} Yu.S. Polubavkina, F.I. Zubov, E.I. Moiseev, N.V. Kryzhanovskaya, M.V. Maximov, E.S. Semenova, K. Yvind, L.V. Asryan, A.E. Zhukov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 263–268.",

year = "2017",

doi = "10.1134/S1063782617020142",

language = "English",

volume = "51",

pages = "254--259",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "M A I K Nauka - Interperiodica",

number = "2",

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TY - JOUR

T1 - Specific features of waveguide recombination in laser structures with asymmetric barrier layers

AU - Polubavkina, Yu

AU - Zubov, F. I.

AU - Moiseev, E.

AU - Kryzhanovskaya, N. V.

AU - Maximov, M. V.

AU - Semenova, Elizaveta

AU - Yvind, Kresten

AU - Asryan, L. V.

AU - Zhukov, A. E.

N1 - Original Russian Text © Yu.S. Polubavkina, F.I. Zubov, E.I. Moiseev, N.V. Kryzhanovskaya, M.V. Maximov, E.S. Semenova, K. Yvind, L.V. Asryan, A.E. Zhukov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 263–268.

PY - 2017

Y1 - 2017

N2 - The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.

AB - The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.

KW - Physics

KW - Magnetism, Magnetic Materials

KW - Physics, general

KW - SC12

U2 - 10.1134/S1063782617020142

DO - 10.1134/S1063782617020142

M3 - Journal article

SN - 1063-7826

VL - 51

SP - 254

EP - 259

JO - Semiconductors

JF - Semiconductors

IS - 2

ER -

Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Abstract

Bibliographical note

Keywords

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