Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

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Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode. / Li, Tiantian; Mao, Dun; Petrone, Nick W.; Grassi, Robert; Hu, Hao; Ding, Yunhong; Huang, Zhihong; Lo, Guo Qiang; Hone, James C.; Low, Tony; Wong, Chee Wei; Gu, Tingyi.

In: Npj 2d Materials and Applications, Vol. 2, No. 1, 36, 01.12.2018.

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

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Author

Li, Tiantian ; Mao, Dun ; Petrone, Nick W. ; Grassi, Robert ; Hu, Hao ; Ding, Yunhong ; Huang, Zhihong ; Lo, Guo Qiang ; Hone, James C. ; Low, Tony ; Wong, Chee Wei ; Gu, Tingyi. / Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode. In: Npj 2d Materials and Applications. 2018 ; Vol. 2, No. 1.

Bibtex

@article{9ab75b05841c442aac5e943095a74cc9,
title = "Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode",
abstract = "Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but only a few device configurations have been explored for a deterministic control over the space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible—near-infrared, zero-bias, and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, the quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this work demonstrates post-fabrication-free two-dimensional material active silicon photonic devices.",
author = "Tiantian Li and Dun Mao and Petrone, {Nick W.} and Robert Grassi and Hao Hu and Yunhong Ding and Zhihong Huang and Lo, {Guo Qiang} and Hone, {James C.} and Tony Low and Wong, {Chee Wei} and Tingyi Gu",
year = "2018",
month = "12",
day = "1",
doi = "10.1038/s41699-018-0080-4",
language = "English",
volume = "2",
journal = "Npj 2d Materials and Applications",
issn = "2397-7132",
publisher = "Nature Research",
number = "1",

}

RIS

TY - JOUR

T1 - Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode

AU - Li, Tiantian

AU - Mao, Dun

AU - Petrone, Nick W.

AU - Grassi, Robert

AU - Hu, Hao

AU - Ding, Yunhong

AU - Huang, Zhihong

AU - Lo, Guo Qiang

AU - Hone, James C.

AU - Low, Tony

AU - Wong, Chee Wei

AU - Gu, Tingyi

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but only a few device configurations have been explored for a deterministic control over the space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible—near-infrared, zero-bias, and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, the quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this work demonstrates post-fabrication-free two-dimensional material active silicon photonic devices.

AB - Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but only a few device configurations have been explored for a deterministic control over the space charge region area in graphene with convincing scalability. Here we investigate a graphene-silicon p-i-n photodiode defined in a foundry processed planar photonic crystal waveguide structure, achieving visible—near-infrared, zero-bias, and ultrafast photodetection. Graphene is electrically contacting to the wide intrinsic region of silicon and extended to the p an n doped region, functioning as the primary photocarrier conducting channel for electronic gain. Graphene significantly improves the device speed through ultrafast out-of-plane interfacial carrier transfer and the following in-plane built-in electric field assisted carrier collection. More than 50 dB converted signal-to-noise ratio at 40 GHz has been demonstrated under zero bias voltage, the quantum efficiency could be further amplified by hot carrier gain on graphene-i Si interface and avalanche process on graphene-doped Si interface. With the device architecture fully defined by nanomanufactured substrate, this work demonstrates post-fabrication-free two-dimensional material active silicon photonic devices.

U2 - 10.1038/s41699-018-0080-4

DO - 10.1038/s41699-018-0080-4

M3 - Journal article

VL - 2

JO - Npj 2d Materials and Applications

JF - Npj 2d Materials and Applications

SN - 2397-7132

IS - 1

M1 - 36

ER -