Smooth YBa2Cu3O7-x thin films prepared by pulsed laser deposition in O2/Ar atmosphere

Anders Kyhle; Johannes Skov; Søren Hjorth; Inge Rasmussen; Jørn Bindslev Hansen

doi:10.1063/1.111331

Smooth YBa2Cu3O7-x thin films prepared by pulsed laser deposition in O2/Ar atmosphere

Anders Kyhle, Johannes Skov, Søren Hjorth, Inge Rasmussen, Jørn Bindslev Hansen

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Abstract

We report on pulsed laser deposition of YBa2Cu3O7-x in a diluted O2/Ar gas resulting in thin epitaxial films which are almost outgrowth-free. Films were deposited on SrTiO3 or MgO substrates around 800-degrees-C at a total chamber pressure of 1.0 mbar, varying the argon partial pressure from 0 to 0.6 mbar. The density of boulders and outgrowths usual for laser deposited films varies strongly with Ar pressure: the outgrowth density is reduced from 1.4 x 10(7) to 4.5 x 10(5) cm-2 with increasing Ar partial pressure, maintaining a critical temperature T(c,zero) almost-equal-to 90 K and a transport critical current density J(c)(77 K) greater-than-or-equal-to 10(6) A/cm2 by extended oxygenation time during cool down.

Original language	English
Journal	Applied Physics Letters
Volume	64
Issue number	23
Pages (from-to)	3178-3180
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.111331
Publication status	Published - 1994

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Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Keywords

Y2O3
OXYGEN
EMISSION
ABLATION

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title = "Smooth YBa2Cu3O7-x thin films prepared by pulsed laser deposition in O2/Ar atmosphere",

abstract = "We report on pulsed laser deposition of YBa2Cu3O7-x in a diluted O2/Ar gas resulting in thin epitaxial films which are almost outgrowth-free. Films were deposited on SrTiO3 or MgO substrates around 800-degrees-C at a total chamber pressure of 1.0 mbar, varying the argon partial pressure from 0 to 0.6 mbar. The density of boulders and outgrowths usual for laser deposited films varies strongly with Ar pressure: the outgrowth density is reduced from 1.4 x 10(7) to 4.5 x 10(5) cm-2 with increasing Ar partial pressure, maintaining a critical temperature T(c,zero) almost-equal-to 90 K and a transport critical current density J(c)(77 K) greater-than-or-equal-to 10(6) A/cm2 by extended oxygenation time during cool down.",

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author = "Anders Kyhle and Johannes Skov and S{\o}ren Hjorth and Inge Rasmussen and Hansen, {J{\o}rn Bindslev}",

note = "Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics",

year = "1994",

doi = "10.1063/1.111331",

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T1 - Smooth YBa2Cu3O7-x thin films prepared by pulsed laser deposition in O2/Ar atmosphere

AU - Kyhle, Anders

AU - Skov, Johannes

AU - Hjorth, Søren

AU - Rasmussen, Inge

AU - Hansen, Jørn Bindslev

N1 - Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

PY - 1994

Y1 - 1994

N2 - We report on pulsed laser deposition of YBa2Cu3O7-x in a diluted O2/Ar gas resulting in thin epitaxial films which are almost outgrowth-free. Films were deposited on SrTiO3 or MgO substrates around 800-degrees-C at a total chamber pressure of 1.0 mbar, varying the argon partial pressure from 0 to 0.6 mbar. The density of boulders and outgrowths usual for laser deposited films varies strongly with Ar pressure: the outgrowth density is reduced from 1.4 x 10(7) to 4.5 x 10(5) cm-2 with increasing Ar partial pressure, maintaining a critical temperature T(c,zero) almost-equal-to 90 K and a transport critical current density J(c)(77 K) greater-than-or-equal-to 10(6) A/cm2 by extended oxygenation time during cool down.

AB - We report on pulsed laser deposition of YBa2Cu3O7-x in a diluted O2/Ar gas resulting in thin epitaxial films which are almost outgrowth-free. Films were deposited on SrTiO3 or MgO substrates around 800-degrees-C at a total chamber pressure of 1.0 mbar, varying the argon partial pressure from 0 to 0.6 mbar. The density of boulders and outgrowths usual for laser deposited films varies strongly with Ar pressure: the outgrowth density is reduced from 1.4 x 10(7) to 4.5 x 10(5) cm-2 with increasing Ar partial pressure, maintaining a critical temperature T(c,zero) almost-equal-to 90 K and a transport critical current density J(c)(77 K) greater-than-or-equal-to 10(6) A/cm2 by extended oxygenation time during cool down.

KW - Y2O3

KW - OXYGEN

KW - EMISSION

KW - ABLATION

U2 - 10.1063/1.111331

DO - 10.1063/1.111331

M3 - Journal article

SN - 0003-6951

VL - 64

SP - 3178

EP - 3180

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Smooth YBa2Cu3O7-x thin films prepared by pulsed laser deposition in O2/Ar atmosphere

Abstract

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Keywords

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