Smooth YBa2Cu3O7-x thin films prepared by pulsed laser deposition in O2/Ar atmosphere

Anders Kyhle, Johannes Skov, Søren Hjorth, Inge Rasmussen, Jørn Bindslev Hansen

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Abstract

We report on pulsed laser deposition of YBa2Cu3O7-x in a diluted O2/Ar gas resulting in thin epitaxial films which are almost outgrowth-free. Films were deposited on SrTiO3 or MgO substrates around 800-degrees-C at a total chamber pressure of 1.0 mbar, varying the argon partial pressure from 0 to 0.6 mbar. The density of boulders and outgrowths usual for laser deposited films varies strongly with Ar pressure: the outgrowth density is reduced from 1.4 x 10(7) to 4.5 x 10(5) cm-2 with increasing Ar partial pressure, maintaining a critical temperature T(c,zero) almost-equal-to 90 K and a transport critical current density J(c)(77 K) greater-than-or-equal-to 10(6) A/cm2 by extended oxygenation time during cool down.
Original languageEnglish
JournalApplied Physics Letters
Volume64
Issue number23
Pages (from-to)3178-3180
ISSN0003-6951
DOIs
Publication statusPublished - 1994

Bibliographical note

Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Keywords

  • Y2O3
  • OXYGEN
  • EMISSION
  • ABLATION

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