TY - JOUR
T1 - Size-Controlled Spalling of LaAlO3/SrTiO3 Micromembranes
AU - Dahm, Rasmus Tindal
AU - Schüsler Erlandsen, Ricci
AU - Trier, Felix
AU - Sambri, Alessia
AU - Gennaro, Emiliano Di
AU - Guarino, Anita
AU - Stampfer, Lukas
AU - Christensen, Dennis Valbjørn
AU - Granozio, Fabio Miletto
AU - Jespersen, Thomas Sand
PY - 2021
Y1 - 2021
N2 - The ability to form freestanding oxide membranes of nanoscale thickness is of great interest for enabling material functionality and for integrating oxides in flexible electronic and photonic technologies. Recently, a route has been demonstrated for forming conducting heterostructure membranes of LaAlO3 and SrTiO3, the canonical system for oxide electronics. In this route, the epitaxial growth of LaAlO3 on SrTiO3 resulted in a strained state that relaxed by producing freestanding membranes with random sizes and locations. Here, we extend the method to enable self-formed LaAlO3/SrTiO3 micromembranes with control over membrane position, their lateral sizes from 2 to 20 μm, and with controlled transfer to other substrates of choice. This method opens up the possibility to study and use the two-dimensional electron gas in LaAlO3/SrTiO3 membranes for advanced device concepts.
AB - The ability to form freestanding oxide membranes of nanoscale thickness is of great interest for enabling material functionality and for integrating oxides in flexible electronic and photonic technologies. Recently, a route has been demonstrated for forming conducting heterostructure membranes of LaAlO3 and SrTiO3, the canonical system for oxide electronics. In this route, the epitaxial growth of LaAlO3 on SrTiO3 resulted in a strained state that relaxed by producing freestanding membranes with random sizes and locations. Here, we extend the method to enable self-formed LaAlO3/SrTiO3 micromembranes with control over membrane position, their lateral sizes from 2 to 20 μm, and with controlled transfer to other substrates of choice. This method opens up the possibility to study and use the two-dimensional electron gas in LaAlO3/SrTiO3 membranes for advanced device concepts.
U2 - 10.1021/acsami.0c21612
DO - 10.1021/acsami.0c21612
M3 - Journal article
C2 - 33661598
SN - 1944-8244
VL - 13
SP - 12341
EP - 12346
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 10
ER -