SiNOI and AlGaAs-on-SOI nonlinear circuits for continuum generation in Si photonics

Houssein El Dirani, Christelle Monat, Stephane Brision, Nicolas Olivier, Christophe Jany, Xavier Letartre, Minhao Pu, Peter David Girouard, Lars Hagedorn Frandsen, Elizaveta Semenova, Leif Katsuo Oxenløwe, Kresten Yvind, Corrado Sciancalepore

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Abstract

In this communication, we report on the design, fabrication, and testing of Silicon Nitride on Insulator (SiNOI) and Aluminum-Gallium-Arsenide (AlGaAs) on silicon-on-insulator (SOI) nonlinear photonic circuits for continuum generation in Silicon (Si) photonics. As recently demonstrated, the generation of frequency continua and supercontinua can be used to overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogeneous integration of III-V on SOI lasers for datacom and telecom applications. By using the Kerr nonlinearity of monolithic silicon nitride and heterointegrated GaAs-based alloys on SOI, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. In our work, we present paths to energy-efficient continua generation on silicon photonics circuits. Notably, we demonstrate spectral broadening covering the full C-band via Kerrbased self-phase modulation in SiNOI nanowires featuring full process compatibility with Si photonic devices. Moreover, AlGaAs waveguides are heterointegrated on SOI in order to dramatically reduce (x1/10) thresholds in optical parametric oscillation and in the power required for supercontinuum generation under pulsed pumping. The manufacturing techniques allowing the monolithic co-integration of nonlinear functionalities on existing CMOS-compatible Si photonics for both active and passive components will be shown. Experimental evidence based on self-phase modulation show SiNOI and AlGaAs nanowires capable of generating wide-spanning frequency continua in the C-Band. This will pave the way for low-Threshold power-efficient Kerr-based comb-and continuum-sources featuring compatibility with Si photonic integrated circuits (Si-PICs).
Original languageEnglish
Title of host publicationProceedings of SPIE
Number of pages7
Volume10535
PublisherSPIE - International Society for Optical Engineering
Publication date2018
Article number1053508
DOIs
Publication statusPublished - 2018
EventComplex Light and Optical Forces XII: SPIE Conference 10549 - The Moscone Center, San Francisco, United States
Duration: 27 Jan 20181 Feb 2018

Conference

ConferenceComplex Light and Optical Forces XII
LocationThe Moscone Center
CountryUnited States
CitySan Francisco
Period27/01/201801/02/2018
SeriesProceedings of S P I E - International Society for Optical Engineering
Volume10535
ISSN0277-786X

Keywords

  • Complementary metal-oxide-semiconductor (CMOS)
  • Nonlinear integrated optics
  • Kerr-based continuum generation
  • Nanowires
  • Photonic integrated circuits (PICs)
  • Silicon nitride (Si3N4)
  • Aluminum gallium arsenide silicon optoelectronics

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