Single-spot e-beam lithography for defining large arrays of nano-holes

Emil Højlund-Nielsen, Tine Greibe, N. Asger Mortensen, Anders Kristensen

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Efficient nanoscale patterning of large areas is required for sub-wavelength optics. Here we use the single-spot exposure strategy, where electron beam lithography (EBL) with a focused Gaussian beam is used to define shapes directly. The serial technique is optimized on the JEOL JBX-9500FS 100 keV prototype EBL system for speed and pattern fidelity to a minimum writing time of around 30 min/cm2 for 200 nm periods in 2D lattices. The machine time and feasibility of the method are assessed in terms of the trade-off between high current and large writing field. © 2014 Elsevier B.V. All rights reserved.
Original languageEnglish
JournalMicroelectronic Engineering
Volume121
Pages (from-to)104-107
Number of pages4
ISSN0167-9317
DOIs
Publication statusPublished - 2014

Keywords

  • Direct-writing
  • Electron beam lithography
  • Nanofabrication
  • Single-shot writing
  • Gaussian beams
  • Nanotechnology
  • e-Beam lithography
  • Focused Gaussian beam
  • High currents
  • Nanoscale patterning
  • Pattern fidelity
  • Single-shot
  • Sub-wavelength

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