Single-spot e-beam lithography for defining large arrays of nano-holes

Emil Højlund-Nielsen; Tine Greibe; N. Asger Mortensen; Anders Kristensen

doi:10.1016/j.mee.2014.03.025

Single-spot e-beam lithography for defining large arrays of nano-holes

Emil Højlund-Nielsen, Tine Greibe, N. Asger Mortensen, Anders Kristensen

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Efficient nanoscale patterning of large areas is required for sub-wavelength optics. Here we use the single-spot exposure strategy, where electron beam lithography (EBL) with a focused Gaussian beam is used to define shapes directly. The serial technique is optimized on the JEOL JBX-9500FS 100 keV prototype EBL system for speed and pattern fidelity to a minimum writing time of around 30 min/cm2 for 200 nm periods in 2D lattices. The machine time and feasibility of the method are assessed in terms of the trade-off between high current and large writing field. © 2014 Elsevier B.V. All rights reserved.

Original language	English
Journal	Microelectronic Engineering
Volume	121
Pages (from-to)	104-107
Number of pages	4
ISSN	0167-9317
DOIs	https://doi.org/10.1016/j.mee.2014.03.025
Publication status	Published - 2014

Keywords

Direct-writing
Electron beam lithography
Nanofabrication
Single-shot writing
Gaussian beams
Nanotechnology
e-Beam lithography
Focused Gaussian beam
High currents
Nanoscale patterning
Pattern fidelity
Single-shot
Sub-wavelength

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title = "Single-spot e-beam lithography for defining large arrays of nano-holes",

abstract = "Efficient nanoscale patterning of large areas is required for sub-wavelength optics. Here we use the single-spot exposure strategy, where electron beam lithography (EBL) with a focused Gaussian beam is used to define shapes directly. The serial technique is optimized on the JEOL JBX-9500FS 100 keV prototype EBL system for speed and pattern fidelity to a minimum writing time of around 30 min/cm2 for 200 nm periods in 2D lattices. The machine time and feasibility of the method are assessed in terms of the trade-off between high current and large writing field. {\textcopyright} 2014 Elsevier B.V. All rights reserved.",

keywords = "Direct-writing, Electron beam lithography, Nanofabrication, Single-shot writing, Gaussian beams, Nanotechnology, e-Beam lithography, Focused Gaussian beam, High currents, Nanoscale patterning, Pattern fidelity, Single-shot, Sub-wavelength",

author = "Emil H{\o}jlund-Nielsen and Tine Greibe and Mortensen, {N. Asger} and Anders Kristensen",

year = "2014",

doi = "10.1016/j.mee.2014.03.025",

language = "English",

volume = "121",

pages = "104--107",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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T1 - Single-spot e-beam lithography for defining large arrays of nano-holes

AU - Højlund-Nielsen, Emil

AU - Greibe, Tine

AU - Mortensen, N. Asger

AU - Kristensen, Anders

PY - 2014

Y1 - 2014

N2 - Efficient nanoscale patterning of large areas is required for sub-wavelength optics. Here we use the single-spot exposure strategy, where electron beam lithography (EBL) with a focused Gaussian beam is used to define shapes directly. The serial technique is optimized on the JEOL JBX-9500FS 100 keV prototype EBL system for speed and pattern fidelity to a minimum writing time of around 30 min/cm2 for 200 nm periods in 2D lattices. The machine time and feasibility of the method are assessed in terms of the trade-off between high current and large writing field. © 2014 Elsevier B.V. All rights reserved.

AB - Efficient nanoscale patterning of large areas is required for sub-wavelength optics. Here we use the single-spot exposure strategy, where electron beam lithography (EBL) with a focused Gaussian beam is used to define shapes directly. The serial technique is optimized on the JEOL JBX-9500FS 100 keV prototype EBL system for speed and pattern fidelity to a minimum writing time of around 30 min/cm2 for 200 nm periods in 2D lattices. The machine time and feasibility of the method are assessed in terms of the trade-off between high current and large writing field. © 2014 Elsevier B.V. All rights reserved.

KW - Direct-writing

KW - Electron beam lithography

KW - Nanofabrication

KW - Single-shot writing

KW - Gaussian beams

KW - Nanotechnology

KW - e-Beam lithography

KW - Focused Gaussian beam

KW - High currents

KW - Nanoscale patterning

KW - Pattern fidelity

KW - Single-shot

KW - Sub-wavelength

U2 - 10.1016/j.mee.2014.03.025

DO - 10.1016/j.mee.2014.03.025

M3 - Journal article

SN - 0167-9317

VL - 121

SP - 104

EP - 107

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Single-spot e-beam lithography for defining large arrays of nano-holes

Abstract

Keywords

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