Single-photon emitters in hexagonal boron nitride: a review of progress

A. Sajid*, Michael J. Ford, Jeffrey R. Reimers

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

This report summarizes progress made in understanding properties such as zero-phonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.
Original languageEnglish
Article number044501
JournalReports on Progress in Physics
Volume83
Issue number4
Number of pages22
ISSN0034-4885
DOIs
Publication statusPublished - 2020

Keywords

  • 2D nanophotonics
  • Single photon emission from 2D materials
  • Hexagonal boron nitride
  • Semiconductor defects
  • DFT and ab initio computational approaches
  • Defects for quantum technologies
  • ODMR from defect in 2D materials

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