Single photon detection by cavity-assisted all-optical gain

Research output: Contribution to journalJournal article – Annual report year: 2019Researchpeer-review

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  • Author: Panuski, Christopher

    Massachusetts Institute of Technology, United States

  • Author: Pant, Mihir

    Massachusetts Institute of Technology, United States

  • Author: Heuck, Mikkel

    Department of Photonics Engineering, Technical University of Denmark, Ørsteds Plads, 2800, Kgs. Lyngby, Denmark

  • Author: Hamerly, Ryan

    Massachusetts Institute of Technology, United States

  • Author: Englund, Dirk R.

    Massachusetts Institute of Technology, United States

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We consider the free-carrier dispersion effect in a semiconductor nanocavity in the limit of discrete photoexcited electron-hole pairs. This analysis reveals the possibility of ultrafast, incoherent transduction and gain from a single photon signal to a strong coherent probe field. Homodyne detection of the displaced probe field enables an all-optical method for room-temperature, photon-number-resolving single photon detection. In particular, we estimate that a single photon absorbed within a silicon nanocavity can, within tens of picoseconds, be detected with ∼99% efficiency and a dark count rate on the order of kilohertz assuming a mode volume Veff∼10−2 (λ/nSi)3 for a 4.5-μm probe wavelength and a loaded quality factor Q on the order of 104.
Original languageEnglish
Article number205303
JournalPhysical Review B
Volume99
Issue number20
Number of pages6
ISSN1098-0121
DOIs
Publication statusPublished - 2019
CitationsWeb of Science® Times Cited: No match on DOI

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