Single and double side textured black silicon require different annealing conditions for optimal passivation with ALD Al2O3

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    Black silicon is an attractive surface for solar cells thanks to its intrinsic antireflective properties, however progress in surface passivation is required to exploit its full potential. Here, we present effective minority carrier lifetime measurements on single side textured, double side textured, and flat reference Si surfaces, passivated by AI2O3 with subsequent thermal activation. Effective lifetime measurements revealed that the annealing time resulting in highest effective lifetime, and therefore in the lowest surface recombination velocity of the textured surface, is depending on whether the wafers are single or double side textured. It follows that optimization of passivation of black silicon lifetime samples needs to be carried out on samples with texturing on one or both sides, depending on the solar cell architecture of interest.
    Original languageEnglish
    Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (wcpec) (a Joint Conference of 45th Ieee Pvsc, 28th Pvsec and 34th Eu Pvsec)
    PublisherIEEE
    Publication date2018
    Pages3105-3107
    ISBN (Electronic)978-1-5386-8529-7
    DOIs
    Publication statusPublished - 2018
    Event7th World Conference on Photovoltaic Energy Conversion - Hilton Waikoloa Village Resort, Waikoloa, United States
    Duration: 10 Jun 201815 Jun 2018
    Conference number: WCPEC-7

    Conference

    Conference7th World Conference on Photovoltaic Energy Conversion
    NumberWCPEC-7
    LocationHilton Waikoloa Village Resort
    CountryUnited States
    CityWaikoloa
    Period10/06/201815/06/2018

    Cite this

    Iandolo, B., Davidsen, R. S., & Hansen, O. (2018). Single and double side textured black silicon require different annealing conditions for optimal passivation with ALD Al2O3. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (wcpec) (a Joint Conference of 45th Ieee Pvsc, 28th Pvsec and 34th Eu Pvsec) (pp. 3105-3107). IEEE. https://doi.org/10.1109/PVSC.2018.8547760
    Iandolo, Beniamino ; Davidsen, Rasmus Schmidt ; Hansen, Ole. / Single and double side textured black silicon require different annealing conditions for optimal passivation with ALD Al2O3. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (wcpec) (a Joint Conference of 45th Ieee Pvsc, 28th Pvsec and 34th Eu Pvsec). IEEE, 2018. pp. 3105-3107
    @inproceedings{fb383bc824c746e1b763fd5a73790741,
    title = "Single and double side textured black silicon require different annealing conditions for optimal passivation with ALD Al2O3",
    abstract = "Black silicon is an attractive surface for solar cells thanks to its intrinsic antireflective properties, however progress in surface passivation is required to exploit its full potential. Here, we present effective minority carrier lifetime measurements on single side textured, double side textured, and flat reference Si surfaces, passivated by AI2O3 with subsequent thermal activation. Effective lifetime measurements revealed that the annealing time resulting in highest effective lifetime, and therefore in the lowest surface recombination velocity of the textured surface, is depending on whether the wafers are single or double side textured. It follows that optimization of passivation of black silicon lifetime samples needs to be carried out on samples with texturing on one or both sides, depending on the solar cell architecture of interest.",
    author = "Beniamino Iandolo and Davidsen, {Rasmus Schmidt} and Ole Hansen",
    year = "2018",
    doi = "10.1109/PVSC.2018.8547760",
    language = "English",
    pages = "3105--3107",
    booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (wcpec) (a Joint Conference of 45th Ieee Pvsc, 28th Pvsec and 34th Eu Pvsec)",
    publisher = "IEEE",
    address = "United States",

    }

    Iandolo, B, Davidsen, RS & Hansen, O 2018, Single and double side textured black silicon require different annealing conditions for optimal passivation with ALD Al2O3. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (wcpec) (a Joint Conference of 45th Ieee Pvsc, 28th Pvsec and 34th Eu Pvsec). IEEE, pp. 3105-3107, 7th World Conference on Photovoltaic Energy Conversion , Waikoloa, United States, 10/06/2018. https://doi.org/10.1109/PVSC.2018.8547760

    Single and double side textured black silicon require different annealing conditions for optimal passivation with ALD Al2O3. / Iandolo, Beniamino; Davidsen, Rasmus Schmidt; Hansen, Ole.

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (wcpec) (a Joint Conference of 45th Ieee Pvsc, 28th Pvsec and 34th Eu Pvsec). IEEE, 2018. p. 3105-3107.

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    TY - GEN

    T1 - Single and double side textured black silicon require different annealing conditions for optimal passivation with ALD Al2O3

    AU - Iandolo, Beniamino

    AU - Davidsen, Rasmus Schmidt

    AU - Hansen, Ole

    PY - 2018

    Y1 - 2018

    N2 - Black silicon is an attractive surface for solar cells thanks to its intrinsic antireflective properties, however progress in surface passivation is required to exploit its full potential. Here, we present effective minority carrier lifetime measurements on single side textured, double side textured, and flat reference Si surfaces, passivated by AI2O3 with subsequent thermal activation. Effective lifetime measurements revealed that the annealing time resulting in highest effective lifetime, and therefore in the lowest surface recombination velocity of the textured surface, is depending on whether the wafers are single or double side textured. It follows that optimization of passivation of black silicon lifetime samples needs to be carried out on samples with texturing on one or both sides, depending on the solar cell architecture of interest.

    AB - Black silicon is an attractive surface for solar cells thanks to its intrinsic antireflective properties, however progress in surface passivation is required to exploit its full potential. Here, we present effective minority carrier lifetime measurements on single side textured, double side textured, and flat reference Si surfaces, passivated by AI2O3 with subsequent thermal activation. Effective lifetime measurements revealed that the annealing time resulting in highest effective lifetime, and therefore in the lowest surface recombination velocity of the textured surface, is depending on whether the wafers are single or double side textured. It follows that optimization of passivation of black silicon lifetime samples needs to be carried out on samples with texturing on one or both sides, depending on the solar cell architecture of interest.

    U2 - 10.1109/PVSC.2018.8547760

    DO - 10.1109/PVSC.2018.8547760

    M3 - Article in proceedings

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    EP - 3107

    BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (wcpec) (a Joint Conference of 45th Ieee Pvsc, 28th Pvsec and 34th Eu Pvsec)

    PB - IEEE

    ER -

    Iandolo B, Davidsen RS, Hansen O. Single and double side textured black silicon require different annealing conditions for optimal passivation with ALD Al2O3. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (wcpec) (a Joint Conference of 45th Ieee Pvsc, 28th Pvsec and 34th Eu Pvsec). IEEE. 2018. p. 3105-3107 https://doi.org/10.1109/PVSC.2018.8547760