Abstract
Black silicon is an attractive surface for solar cells thanks to its intrinsic antireflective properties, however progress in surface passivation is required to exploit its full potential. Here, we present effective minority carrier lifetime measurements on single side textured, double side textured, and flat reference Si surfaces, passivated by Al2O3 with subsequent thermal activation. Effective lifetime measurements revealed that the annealing time resulting in highest effective lifetime, and therefore in the lowest surface recombination velocity of the textured surface, is depending on whether the wafers are single or double side textured. It follows that optimization of passivation of black silicon lifetime samples needs to be carried out on samples with texturing on one or both sides, depending on the solar cell architecture of interest.
Original language | English |
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Publication date | 2018 |
Number of pages | 3 |
Publication status | Published - 2018 |
Event | 7th World Conference on Photovoltaic Energy Conversion - Hilton Waikoloa Village Resort, Waikoloa, United States Duration: 10 Jun 2018 → 15 Jun 2018 Conference number: WCPEC-7 |
Conference
Conference | 7th World Conference on Photovoltaic Energy Conversion |
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Number | WCPEC-7 |
Location | Hilton Waikoloa Village Resort |
Country/Territory | United States |
City | Waikoloa |
Period | 10/06/2018 → 15/06/2018 |
Keywords
- Black silicon
- ALD
- Al2O3
- Surface recombination velocity