Single and double side textured black silicon require different annealing conditions for optimal passivation with ALD Al2O3

Beniamino Iandolo, Rasmus S. Davidsen, Ole Hansen

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    Abstract

    Black silicon is an attractive surface for solar cells thanks to its intrinsic antireflective properties, however progress in surface passivation is required to exploit its full potential. Here, we present effective minority carrier lifetime measurements on single side textured, double side textured, and flat reference Si surfaces, passivated by Al2O3 with subsequent thermal activation. Effective lifetime measurements revealed that the annealing time resulting in highest effective lifetime, and therefore in the lowest surface recombination velocity of the textured surface, is depending on whether the wafers are single or double side textured. It follows that optimization of passivation of black silicon lifetime samples needs to be carried out on samples with texturing on one or both sides, depending on the solar cell architecture of interest.
    Original languageEnglish
    Publication date2018
    Number of pages3
    Publication statusPublished - 2018
    Event7th World Conference on Photovoltaic Energy Conversion - Hilton Waikoloa Village Resort, Waikoloa, United States
    Duration: 10 Jun 201815 Jun 2018
    Conference number: WCPEC-7

    Conference

    Conference7th World Conference on Photovoltaic Energy Conversion
    NumberWCPEC-7
    LocationHilton Waikoloa Village Resort
    CountryUnited States
    CityWaikoloa
    Period10/06/201815/06/2018

    Keywords

    • Black silicon
    • ALD
    • Al2O3
    • Surface recombination velocity

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