Simulation and Measurement of Angle Resolved Reflectance from Black Si Surfaces

Rasmus Schmidt Davidsen, Kaiyu Wu, Michael Stenbæk Schmidt, Anja Boisen, Ole Hansen

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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    Abstract

    In this work angle-resolved reflectance from nanostructured Si surfaces realized by maskless RIE texturing has been simulated and measured. The simulation and experimental measurement data show the same trend. Experimentally a total reflectance below 1% for incident angles below 30o and specular reflectance below 0.1% at incident angles below 70o is seen. In both simulation and experiment the specular reflectance is below 10% at incident angles below 65o and below 1% at incident angles below 45o in the case of non-linear graded refractive index. From the simulation results the non-linear graded refractive index yields lower reflectance than the linearly graded refractive index.
    Original languageEnglish
    Title of host publicationProceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition
    Number of pages3
    Publication date2015
    Publication statusPublished - 2015
    Event31st European Photovoltaic Solar Energy Conference and Exhibition - Hamburg, Germany
    Duration: 14 Sep 201518 Sep 2015
    Conference number: 31

    Conference

    Conference31st European Photovoltaic Solar Energy Conference and Exhibition
    Number31
    CountryGermany
    CityHamburg
    Period14/09/201518/09/2015
    SeriesEU PVSEC Proceedings
    ISSN2196-100X

    Keywords

    • Black silicon
    • Reactive ion etching
    • Angle dependence
    • Reflectance
    • Nanostructures

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